This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V3). Similar to V3, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the “effective NIEL” using results from molecular dynamics simulations.
We present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. We compare our results with data published in previous works and point out some possible misinterpretation of DLTS data due to detector processing induced inhomogeneous distribution of impurities. Finally, we present a method to determine the absolute concentration of the oxygen and carbon impurities as functions of depth in devices by carefully analyzing the carbon interstitital annealing kinetics.
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