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A comparison of the photoluminescence of Er-doped hydrogenated amorphous silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is presented. It is shown that a-Si:H(Er) exhibits efficient room-temperature photoluminescence at 1.537 μm which is as strong as the emission from optimized c-Si(Er) at 2 K. Most remarkably, there is practically no temperature quenching of the emission intensity in the range 2–300 K. The experiments suggest that the lifetime connected with the Er-induced emission is considerably shorter in a-Si:H(Er) than in c-Si(Er) which may be responsible for the different dependences of the photoluminescence intensity on the temperature, chopping frequency, and excitation power.

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