Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation

Казанский, А.Г.; Mell, H.; Weiser, G.; Теруков, Е. И.

doi:10.1016/s0022-3093(01)00975-9

Cited by 5 publications

(11 citation statements)

References 13 publications

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“…In our study [6] of the electrical properties of a-Si:H films doped with the MO tris(2,4-pentanedionato)-Er(III) we used samples deposited with an oven temperature of 105 °C. Preliminary results of a Rutherford backscattering (RBS) analysis suggested that the Er density in the films was below the detection limit of the experimental setup which was 10 19 cm -3 [6].…”

Section: Resultsmentioning

confidence: 99%

“…The deposition conditions and the method of erbium doping were described in a previous paper [6]. The p-i-n-type structures consisted of the following layers: p + (50 nm a-Si:H doped with 0.3% diborane), p -(50 nm a-Si:H doped with 300 ppm diborane and erbium), i (400 nm a-Si:H doped with 100 ppm diborane and erbium), n + (50 nm a-Si:H doped with 0.3% phosphine), m (100 nm evaporated chromium).…”

Section: Methodsmentioning

confidence: 99%

“…In a recent study [6] we observed that erbium-doped a-Si:H films with surprisingly good electronic properties can be prepared by conventional plasma decomposition of silane, when the volatile metalorganic compound (MO) tris(2,4-pentanedionato)-Er(III) is introduced into the plasma. This MO, Er(C 5 H 7 O 2 ) 3 , has a more favorable erbium-carbon ratio than previously used compounds, for instance Er(C 11 H 19 O 2 ) 3 [7].…”

Section: Introductionmentioning

confidence: 99%

“…These properties are similar to those of films doped with approximately 10 ppm phosphine suggesting that donors are created by the erbium doping with a density similar to N D . The donor states are probably associated with ErO x complexes as in crystalline silicon [6,8]. By suitable codoping with diborane both compensated (near-intrinsic) and p-type Er-doped films can be deposited.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Mell

Weiser

Теруков

et al. 2004

phys. stat. sol. (c)

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We have fabricated erbium-doped amorphous silicon p-i-n structures by conventional plasma decomposition of silane. The erbium doping was achieved by sublimation of the metal-organic compound tris(2,4-pentanedionato)-Er(III) which has a more favorable erbium-carbon ratio than previously used compounds. Since the Er centers introduce donors and defects in the amorphous silicon, counterdoping with diborane has been required to obtain the near-intrinsic i layers with a reduced defect density. The p-i-n junctions have excellent diode characteristics and exhibit, under forward bias, pronounced electroluminescence near 1.54 µm at room temperature. Their power efficiency is by two orders of magnitude larger than that of previously fabricated heterojunctions of amorphous and crystalline silicon. We discuss possible mechanisms of the Er 3+ excitation in our diodes.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Mell

Weiser

Теруков

et al. 2004

phys. stat. sol. (c)

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“…The Er 3+ ion thus is in the centre of an oxygen octahedron, which is distorted because the oxygen bonds are not equivalent. The compound is introduced into a silane plasma by heating the powder to 115 o C-120 o C in a position close to the plasma [17]. Films of 1 µm thickness are grown on quartz substrates at 250 o C by plasma decomposition of silane-methane gas at a pressure of 0.1 mb and a flow rate of 10 sccm.…”

Section: Erbium In Plasma Deposited Films (Pecvd)mentioning

confidence: 99%

Energy transfer to Er ³⁺ ions in a‐Si _{1−
x} C _x :H alloys: emission at 1.54 mm wavelength

Weiser

Kühne

Terukov

2004

phys. stat. sol. (c)

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The energy transfer to Er 3+ ions in a-Si 1-x C x : H films has been studied by absorption, luminescence and magnetic resonance spectroscopy. Erbium is incorporated either by magnetron assisted co-sputtering of Si and Er in a silane plasma or by conventional plasma deposition of a metalorganic compound which yields films of very different defect density and Er environment. The data confirm Er ions as efficient radiative recombination centres in a-Si : H, which are excited by resonant energy transfer from electron hole pairs in the host and disprove that dangling bonds are needed for emission at 1.5 µm wavelength by Erbium ions. We propose a Förster energy transfer, which is based on resonant dipole coupling. Resonance to excited states of Er 3+ is achieved as electrons thermalise in tail states and form pairs with localized holes and enables rapid energy transfer to Erbium ions while back transfer is inefficient due to lattice relaxation. Thermalisation and recombination rates in the host material control the excitation of Er ions and can be modified by alloying silicon with carbon.

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Light-induced effects in a-Si:H(Er)

Birukov

Fenuchin

Казанский

et al. 2003

Materials Science and Engineering: B

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Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation

Cited by 5 publications

References 13 publications

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Energy transfer to Er ³⁺ ions in a‐Si _{1−
x} C _x :H alloys: emission at 1.54 mm wavelength

Light-induced effects in a-Si:H(Er)

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Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation

Cited by 5 publications

References 13 publications

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Energy transfer to Er 3+ ions in a‐Si 1− x C x :H alloys: emission at 1.54 mm wavelength

Light-induced effects in a-Si:H(Er)

Contact Info

Product

Resources

About

Energy transfer to Er ³⁺ ions in a‐Si _{1−
x} C _x :H alloys: emission at 1.54 mm wavelength