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sweep, Fig. 1 in Ref. 13). Between 0.8 to 0.6 V the inhibiting species is probably (9) the incipient hydrous oxide species formed spontaneously at the more active sites at the interface. Since below 0.5 V the hydrous oxide is no longer stable the main limitation in this region is mass transfer of dissolved gas across the boundary layer at the interface.

Deposition and 1.54 μm Er 3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH 4 with concurrent sputtering of erbium

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The mechanism of charge transfer resulting in hydrogen evolution is investigated on bare and metal-(Pt, Au, Ag, Cu, Pb) coated p-and n-type indium phosphide. The metals were deposited by (photo)electrochemical means. Flatband potentials of p-InP are determined in the dark and under illumination. The fiatband potential shift of illuminated electrodes is a logarithmic function of the photocurrent density and can be presented in Tafel plots. Slopes as well as intercepts of such Tafel plots reflect the electrocatalytic properties of the catalyst deposit. An analytical expression for the current-voltage curves and the flatband potential shift is derived which accounts for Schottky diode properties as well as for interfacial charge transfer.

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