A study of the local electronic and atomic structure in a-SixC1−x amorphous alloys using ultrasoft X-ray emission spectroscopy

Терехов, В. А.; Теруков, Е. И.; Трапезникова, И. Н.; Kashkarov, M.; Kurilo, O. V.; Turishchev, S. Yu.; Голоденко, А. Б.; Domashevskaya, É. P.

doi:10.1134/1.1992643

Cited by 10 publications

(10 citation statements)

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“…The intensity of pure MWCNT is found to be higher than that of MWCNT/SiO 2 -NP (Si-NPs = 5.75 atom %) and lower than the intensity of MWCNTs/SiO 2 -NPs (Si-NPs = 1.5 atom %). As suggested elsewhere, 30 these features in the π* region may indicate that C–H or Si–C(:H) or Si–C(:O) and sp 2 C–C bonds have been formed. Effects of Si–C(:H) and/or Si–C(:O) bonding on the electronic structure of MWCNTs is confirmed by the difference in the intensities of the nanocomposites.…”

Section: Resultssupporting

confidence: 62%

“…The intensity of pure MWCNT is found to be higher than that of MWCNT/SiO 2 -NP (Si-NPs = 5.75 atom %) and lower than the intensity of MWCNTs/SiO 2 -NPs (Si-NPs = 1.5 atom %). As suggested elsewhere, 30 origin of the peaks at ∼529 and ∼531 eV is attributed to bond resonance transitions from carboxylic groups and hydroxyl groups. 31 The observed double structure peaks at ∼533 and 535 eV in each O K-edge spectra were assigned to the physisorbed O 2 32 that may occur during the nanocomposite synthesis process.…”

Section: Acs Omegasupporting

confidence: 67%

“…31 The observed double structure peaks at ∼533 and 535 eV in each O K-edge spectra were assigned to the physisorbed O 2 32 that may occur during the nanocomposite synthesis process. The peak at ∼540.5 eV for MWCNTs is assigned to σ* 30 and is shifted to ≈0.4 eV toward the lower energy for MWCNTs/SiO 2 -NPs, indicating that the oxidized Si-NPs interacted with C and O in MWCNTs. The subtracted background shown as an inset of Figure 2b indicates that the intensity of MWCNTs is higher than that of MWCNTs/SiO 2 -NPs (Si-NPs = 5.75 atom %) and lower than that of MWCNTs/SiO 2 -NP (Si-NPs = 1.5 atom %) nanocomposites.…”

Section: Resultsmentioning

confidence: 99%

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Electronic, Electrical, and Magnetic Behavioral Change of SiO₂-NP-Decorated MWCNTs

et al. 2019

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Silicon-oxide-nanoparticle (SiO2-NP) heteroatoms were decorated/deposited onto multiwall carbon nanotube (MWCNT) surface to tune the properties of MWCNTs for electronic and magnetic applications. To achieve this objective, SiO2-NPs and MWCNTs were prepared and suspended together into toluene and heated at <100 °C for the formation of MWCNTs/SiO2-NP nanocomposites. A change in the microstructure, electronic, electrical, and magnetic behaviors of MWCNT nanocomposites decorated/deposited with silicon content was investigated using different techniques, viz., scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy for structural, compositional, and electronic structure, while current–voltage was used for electrical properties and field-dependent magnetization and electron spin resonance techniques were used for magnetic properties. The results indicated that SiO2-NPs adhered onto MWCNTs, resulting in variation in the material conductivity with the Si-NP content. The coercivity of MWCNT nanocomposites adhered with 1.5 atom % Si-NPs (HC@40 K = 689 Oe) is higher than that of those adhered with 5.75 atom % Si-NPs (HC@40 K = 357 Oe). In general, the results provide information about the possibilities of tuning the electronic, electrical, and magnetic properties of MWCNTs by adherence of SiO2-NPs onto them. This tuning of material properties could be useful for different electronic and magnetic device applications.

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Section: Resultssupporting

confidence: 62%

“…The intensity of pure MWCNT is found to be higher than that of MWCNT/SiO 2 -NP (Si-NPs = 5.75 atom %) and lower than the intensity of MWCNTs/SiO 2 -NPs (Si-NPs = 1.5 atom %). As suggested elsewhere, 30 origin of the peaks at ∼529 and ∼531 eV is attributed to bond resonance transitions from carboxylic groups and hydroxyl groups. 31 The observed double structure peaks at ∼533 and 535 eV in each O K-edge spectra were assigned to the physisorbed O 2 32 that may occur during the nanocomposite synthesis process.…”

Section: Acs Omegasupporting

confidence: 67%

Section: Resultsmentioning

confidence: 99%

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Electronic, Electrical, and Magnetic Behavioral Change of SiO₂-NP-Decorated MWCNTs

et al. 2019

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“…This change in the absorption edge is attributed to the change in the band gap of the N-FLG samples due to the structural rearrangement via the bonding of nitrogen with the host carbon lattice. 41,42 Apart from the * and * resonance peaks, two other peaks observed at ~288.0 eV and ~289.3 eV are ascribed to C-H bonds and interlayer graphite states, respectively (shown as inset below in Fig. 2a).…”

Section: 39mentioning

confidence: 99%

Tuning the Electronic and Magnetic Properties of Nitrogen-Functionalized Few-Layered Graphene Nanoflakes

et al. 2017

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In this work, we report on the modification of electronic and magnetic properties of few layered graphene (FLG) nanoflakes via nitrogen functionalisation carried out using radio frequency (rf-PECVD) and electron cyclotron resonance (ECR) plasma processes. Even though the rf-PECVD N2 treatment leads to higher Ndoping levels in the FLGs (4.06 at%) as compared to the ECR process (2.18 at.%), the ferromagnetic behaviour of ECR FLG(118.62 x 10 -4 emu/gm) was significantly higher than the rf-PECVD (0.39 x 10 -4 emu/gm) and pristine graphene (3.47 x 10 -4 emu/gm). While both plasma processes introduce electron donating N-atoms in the graphene structure, distinct dominant nitrogen bonding configurations (pyridinic, pyrrolic) were observed for each FLG type. While, the ECR plasma introduces more sp 2 type nitrogen moieties, the rf-PECVD process led to the formation of sp 3 coordinated nitrogen functionalities, as confirmed through Raman measurements. The samples further characterised using X -ray absorption near edge spectroscopy (XANES) and X-ray, ultraviolet photoelectron spectroscopies revealed an increased electronic density of states and a significantly higher concentration of pyrrolic groups in the rf-PECVD samples. Due to the formation of reactive edge structures and pyridinic nitrogen moieties, the ECR functionalised FLGs expressed highest saturation magnetisation behaviour with the lowest field hysteretic features. In comparison, the rf-PECVD samples, displayed the lowest saturation magnetisation owing to the disappearance of magnetic edge states and formation of stable non-radical type defects in the pyrrole type structures. Our experimental results thus provide new evidence to control the magnetic and electronic properties of few layered graphene nanoflakes via control of the plasma-processing route.• INTRODUCTIONIntrinsic magnetism observed in materials without d-or f-electrons has attracted much interest, especially for carbon-based materials and in particular, graphene. There has been a long-standing interest in the development of ferromagnetic graphene for realizing its applications into spintronic devices via the combination of spin and charge. [1][2][3][4] The introduction of magnetic response in graphene via the introduction of edges, vacancy defects or adsorbed atoms has been investigated using both theoretical and experimental means. [1][2][3][4][5][6][7][8][9][10][11][12][13] Various theoretical studies. [3][4][5][6][7][8][9][10] have suggested that zigzag edges or point defects in graphene as the spin units should 3 carry magnetic moment with possible long-range order coupling. This coupling itself can be ferromagnetic or antiferromagnetic, depending on whether the zigzag edges or defects correspond to the same or to different hexagonal sub-lattice of the graphene lattice, respectively. At present, the intrinsic magnetic properties of finite sized graphene sheet are far from being understood, given that the magnetic signal from a finite sized graphene sheet is too weak to be detected by macr...

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“…But the weak dependence of the inversed peak intensity with grazing angles argues against the proposition of Bragg diffraction at silicon nanocrystals. Moreover, the effect of XANES inversed intensity near the C Kα edge was observed by our group previously [11] in the disordered system -layered amorphous SiC x films.…”

Section: Xanes Spectramentioning

confidence: 57%

XANES, USXES and XPS investigations of electron energy and atomic structure peculiarities of the silicon suboxide thin film surface layers containing Si nanocrystals

Терехов

Turishchev

Pankov

et al. 2010

Surface & Interface Analysis

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Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO 2 system formation with silicon nanocrystals were investigated before and after 900-1100 • C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near edge structure spectroscopy and X-ray diffraction. The appearance of (111) oriented luminescent silicon nanoclusters in considerable amounts on annealing at 1000-1100 • C is established in the investigated films. An anomalous phenomenon of the X-ray absorption quantum yield intensity inversing for the L 2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.

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A study of the local electronic and atomic structure in a-SixC1−x amorphous alloys using ultrasoft X-ray emission spectroscopy

Cited by 10 publications

References 2 publications

Electronic, Electrical, and Magnetic Behavioral Change of SiO₂-NP-Decorated MWCNTs

Electronic, Electrical, and Magnetic Behavioral Change of SiO₂-NP-Decorated MWCNTs

Tuning the Electronic and Magnetic Properties of Nitrogen-Functionalized Few-Layered Graphene Nanoflakes

XANES, USXES and XPS investigations of electron energy and atomic structure peculiarities of the silicon suboxide thin film surface layers containing Si nanocrystals

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A study of the local electronic and atomic structure in a-SixC1−x amorphous alloys using ultrasoft X-ray emission spectroscopy

Cited by 10 publications

References 2 publications

Electronic, Electrical, and Magnetic Behavioral Change of SiO2-NP-Decorated MWCNTs

Electronic, Electrical, and Magnetic Behavioral Change of SiO2-NP-Decorated MWCNTs

Tuning the Electronic and Magnetic Properties of Nitrogen-Functionalized Few-Layered Graphene Nanoflakes

XANES, USXES and XPS investigations of electron energy and atomic structure peculiarities of the silicon suboxide thin film surface layers containing Si nanocrystals

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Electronic, Electrical, and Magnetic Behavioral Change of SiO₂-NP-Decorated MWCNTs

Electronic, Electrical, and Magnetic Behavioral Change of SiO₂-NP-Decorated MWCNTs