The work considers the processes of formation of aluminium melt drops, dispersion of aluminium melts and dynamics along the surface of the semiconductor during the electrical explosion of the metal film. It has been shown that in conditions of flow of rectangular high-density current pulses (amplitude j=8.1010 A/m2 and duration up to 2.5 ms), an electrical explosion of a conductor occurs through a test structure based on aluminium film (thickness 3 μm). Dispersion of up to 30% of the mass of the aluminium film is observed.
It has been established that the main parameter characterizing the dispersion during the destruction of an aluminium film is the energy of an electrical pulse. The distribution of rounded aluminium particles by size (diameter) has been determined experimentally. It has been found that the largest number of particles in the conditions considered are 1-3 µm in size.
The effect of constant magnetic fields on the formation and dynamics of molten Al–Si inclusions in silicon in the field of structural inhomogeneity of a crystal (the dislocation density-gradient field) is considered. The migration rates of liquid inclusions in crystals have been found experimentally under conditions of prevailing melting–crystallization mechanisms at the phase interfaces between the melt and matrix before and after magnetic exposure. It has been found that a preliminarily exposure of dislocation silicon samples in a constant magnetic field leads to an increase in the displacement speed of molten zones in the density-gradient field.
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