The issues of the formation and migration of molten zones during the electric explosion of thin aluminum films on the oxidized silicon surface are considered. A difference was found in the mechanisms of formation and migration of melted zones on the surface during the passage of the current pulse and after it was turned off. It was revealed that after the current pulse is switched off, the migration of molten zones is determined by the temperature gradient near a local heat source. The temperature gradients were obtained from the size dependence of the displacement velocity and the coefficient of thermoelasticity was estimated, which determines the dynamics of zone migration in the temperature gradient field.
The effect of constant magnetic fields on the formation and dynamics of molten Al–Si inclusions in silicon in the field of structural inhomogeneity of a crystal (the dislocation density-gradient field) is considered. The migration rates of liquid inclusions in crystals have been found experimentally under conditions of prevailing melting–crystallization mechanisms at the phase interfaces between the melt and matrix before and after magnetic exposure. It has been found that a preliminarily exposure of dislocation silicon samples in a constant magnetic field leads to an increase in the displacement speed of molten zones in the density-gradient field.
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