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To decrease single-wall carbon nanotube (SWCNT) lengths to a value of 100-200 nm, aggressive cutting methods, accompanied by a high loss of starting material, are frequently used. We propose a cutting approach based on low temperature intensive ultrasonication in a mixture of sulfuric and nitric acids. The method is nondestructive with a yield close to 100%. It was applied to cut nanotubes produced in three different ways: gas-phase catalysis, chemical vapor deposition, and electric-arc-discharge methods. Raman and Fourier transform infrared spectroscopy were used to demonstrate that the cut carbon nanotubes have a low extent of sidewall degradation and their electronic properties are close to those of the untreated tubes. It was proposed to use the spectral position of the far-infrared absorption peak as a simple criterion for the estimation of SWCNT length distribution in the samples.

We measure the conductivity spectra of thin films comprising bundled single-walled carbon nanotubes (CNTs) of different average lengths in the frequency range 0.3-1000 THz and temperature interval 10-530 K. The observed temperature-induced changes in the terahertz conductivity spectra are shown to depend strongly on the average CNT length, with a conductivity around 1 THz that increases/decreases as the temperature increases for short/long tubes. This behaviour originates from the temperature dependence of the electron scattering rate, which we obtain from Drude fits of the measured conductivity in the range 0.3-2 THz for 10 µm length CNTs. This increasing scattering rate with temperature results in a subsequent broadening of the observed THz conductivity peak at higher temperatures and a shift to lower frequencies for increasing CNT length. Finally, we show that the change in conductivity with temperature depends not only on tube length, but also varies with tube density. We record the effective conductivities of composite films comprising mixtures of WS 2 nanotubes and CNTs vs CNT density for frequencies in the range 0.3-1 THz, finding that the conductivity increases/decreases for low/high density films as the temperature increases. This effect arises due to the density dependence of the effective length of conducting pathways in the composite films, which again leads to a shift and temperature dependent broadening of the THz conductivity peak.

Recently observed quantum corrections to the conductivity of SnO 2 films suggest the existence of extended states and thus raise the question about the presence and mechanism of a metal-insulator transition. We present a comparative analysis of negative magnetoresistance, observed in fields up to 52 T on SnO 2 polycrystalline films, performed in the frame of both hopping conduction model and quantum corrections to the conductivity model, with the purpose to establish the ranges of agreement between these models and the obtained data. Our results suggest that the observed negative magnetoresistance of SnO 2 films is due to corrections stemming from the weak localization and electron-electron interaction.

Electrical and magnetotransport properties of single walled carbon nanotube (SWCNT) fibers are reported. The dependencies of resistance on temperature can be approximated by the Mott law for three-dimensional variable range hopping (VRH) below 80 K and by typical law for fluctuation induced tunneling model within the range of 80–300 K. Both negative and positive magnetoresistances (MRs) were observed. At low fields, MR is negative. Positive upturn was observed on the MR curves, which shifted to the high field’s values with temperature increase. The upturn field of the MR effect was shifted from 1.5 T at 2 K to a value of about 20 T at 40 K. The value of positive MR varies as exp(B2), which changes to B1/3 at sufficiently high fields as expected for the VRH transport. The model of VRH transport is illustrated by the influence of strong microwave field and terahertz radiation induced photocurrent manifestation at low temperatures.

The aim of this work is development of technique for synthesis of tin oxides films with various stoichiometric composition, characterized by high electrical conductivity and light transmittance in the UV and visible range of the electromagnetic spectrum, for their further application as humidity and gas sensors, as well as electrodes for electro-and photocatalytic converters.Nonstoichiometric SnO/SnO2 /SnO2−δ films were synthesized by reactive magnetron sputtering of tin onto glass substrates in argon plasma with oxygen addition and with subsequent thermal oxidation of the formed layers in air. To change the structural, optical, and electrical properties of the films and to find out the optimal synthesis parameters, the oxygen content during the deposition process and the annealing temperature in air were varied in the range of 0–2 vol. % and of 200–450 °C, respectively. The characterization of the films was carried out using a 4-probe method for measuring the electrical resistance, X-ray diffraction, and optical spectroscopy of light transmission.As a result of a comprehensive analysis of the structural, optical and electrical properties of the films, it was found that the optimal synthesis parameters to obtain the most transparent and conductive coatings promising for use as humidity, gas sensors and in photovoltaic devices are the following: oxygen content in argon plasma during sputtering process is ≈ 0,8–1,2 vol. %, the annealing temperature in air is ≈ 350–375 °C. In this case a polycrystalline film with high electrical conductivity and high transmittance in the visible and UV regions of the electromagnetic spectrum with prevailing of tin dioxide phase with structural defects (oxygen vacancies) is formed.

Direct energy conversion techniques are now dominated by photovoltaics. But, this dominance will be soon challenged by the emergence of a new conversion methods, known as so called "chemovoltaic". Here we demonstrate the possibility of the electric energy generation through interactions of atmospheric moisture and ZrO 2 based nano

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