Direct energy conversion techniques are now dominated by photovoltaics. But, this dominance will be soon challenged by the emergence of a new conversion methods, known as so called "chemovoltaic". Here we demonstrate the possibility of the electric energy generation through interactions of atmospheric moisture and ZrO 2 based nano
This work presents the main static and dynamic performances showed by one dimensional thin film position sensitive detectors (ID TFPSD), based on a-Si:H technology, with a size of 80 mm x 5 mm. The results obtained show that the TFPSD is able to respond to light powers as low as 2g W/cm 2 , presenting a detection accuracy, linearity and response frequency better than 10 gm, 2% and 2 KHz, respectively. These results are quite promising regarding the application of these sensors to a wide variety of optical inspection systems where continuous quality control is required.
We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm 2 /Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×10 5 . The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.
Highly transparent and conductive ZnO:Ga thin films were produced by rf magnetron sputtering at room temperature on polyethylene naphthalate substrates. The films present a good electrical and optical stability, surface uniformity and a very good adhesion to the polymeric substrates. The lowest resistivity obtained was 5×10-4 Ωcm with a sheet resistance of 15 Ω/sqr and an average optical transmittance in the visible part of the spectra of 80 %. It was also shown that by passivating the polymeric surface with a thin SiO2 layer, the electrical and structural properties of the films are improved nearly by a factor of 2.
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