A passive detection scheme for broadband, 10 GHz-2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In(0.54)Ga(0.46)As wafer as mesas of 3 µm depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz
Electrical and magnetotransport properties of single walled carbon nanotube (SWCNT) fibers are reported. The dependencies of resistance on temperature can be approximated by the Mott law for three-dimensional variable range hopping (VRH) below 80 K and by typical law for fluctuation induced tunneling model within the range of 80–300 K. Both negative and positive magnetoresistances (MRs) were observed. At low fields, MR is negative. Positive upturn was observed on the MR curves, which shifted to the high field’s values with temperature increase. The upturn field of the MR effect was shifted from 1.5 T at 2 K to a value of about 20 T at 40 K. The value of positive MR varies as exp(B2), which changes to B1/3 at sufficiently high fields as expected for the VRH transport. The model of VRH transport is illustrated by the influence of strong microwave field and terahertz radiation induced photocurrent manifestation at low temperatures.
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