The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D) spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we report on an all-2D vertical spin valve that combines a typical layered semiconductor MoS 2 with vdW ferromagnetic metal Fe 3 GeTe 2 (FGT) flakes. The linear current−voltage curves illustrate that Ohmic contacts are formed in FGT/MoS 2 interfaces, while the temperature dependence of the junction resistance further demonstrates that the MoS 2 interlayer acts as a conducting layer instead of a tunneling layer. In addition, the magnitude of the magnetoresistance (MR) of 3.1% at 10 K is observed, which is around 8 times larger than that of the reported spin valves based on MoS 2 sandwiched by conventional ferromagnetic electrodes. The MR decreasing monotonically with increasing temperature follows the Bloch's law. As the bias current decreases exponentially, the MR increases linearly up to a maximum value of 4.1%. Our results reveal the potential opportunities of vdW heterostructures for developing novel spintronic devices.
2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low‐dimensional electronic, optoelectronic, and spintronic devices. Here, all‐2D van der Waals vertical spin‐valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe3GeTe2 as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole‐free tunnel barrier at the Fe3GeTe2/InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 µA at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all‐2D van der Waals ferromagnet/semiconductor heterojunction devices.
The magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional (2D) van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85% at room temperature (T = 300 K) in vdW MTJs based on a thin (< 10 nm) semiconductor spacer WSe2 layer embedded between two Fe3GaTe2 electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164% at T = 10 K. The demonstration of TMR in ultra-thin MTJs at room-temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.
Graphene and nanomaterials based flexible pressure sensors R&D activities are becoming hot topics due to the huge marketing demand on wearable devices and electronic skin (E-Skin) to monitor the human body's actions for dedicated healthcare. Herein, we report a facile and efficient fabrication strategy to construct a new type of highly flexible and sensitive wearable E-Skin based on graphite nanoplates (GNP) and polyurethane (PU) nanocomposite films. The developed GNP/PU E-Skin sensors are highly flexible with good electrical conductivity due to their unique binary microstructures with synergistic interfacial characteristics, which are sensitive to both static and dynamic pressure variation, and can even accurately and quickly detect the pressure as low as 0.005 N/50 Pa and momentum as low as 1.9 mN·s with a gauge factor of 0.9 at the strain variation of up to 30%. Importantly, our GNP/PU E-Skin is also highly sensitive to finger bending and stretching with a linear correlation between the relative resistance change and the corresponding bending angles or elongation percentage. In addition, our E-Skin shows excellent sensitivity to voice vibration when exposed to a volunteer's voice vibration testing. Notably, the entire E-Skin fabrication process is scalable, low cost, and industrially available. Our complementary experiments with comprehensive results demonstrate that the developed GNP/PU E-Skin is impressively promising for practical healthcare applications in wearable devices, and enables us to monitor the real-world force signals in real-time and in-situ mode from pressing, hitting, bending, stretching, and voice vibration.
Among the numerous two-dimensional van der Waals (vdW) magnetic materials, Fe3GeTe2 (FGT), due to its outstanding properties such as metallicity, high Curie temperature and strong perpendicular magnetic anisotropy, quickly emerged...
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