Current-assisted magnetization reversal in Fe₃GeTe₂ van der Waals homojunctions

Abstract

Among the numerous two-dimensional van der Waals (vdW) magnetic materials, Fe3GeTe2 (FGT), due to its outstanding properties such as metallicity, high Curie temperature and strong perpendicular magnetic anisotropy, quickly emerged...

Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions

“…At the same time, the spin-transfer torque resulting from the electrons flowing from bottom to top may also help to switch the bottom FGT electrode. 36 Thus, the coercive field H C ∼ 0 mT is observed for the bottom FGT layer. The unchanged switching field of 170 mT for the top FGT electrode is attributed to the saturated MAE corresponding to the initial coercivity.…”

“…At V bias = −600 mV, the lowered electron density results in a negligible perpendicular or even an in-plane anisotropy field for the bottom FGT electrode. At the same time, the spin-transfer torque resulting from the electrons flowing from bottom to top may also help to switch the bottom FGT electrode . Thus, the coercive field H C ∼ 0 mT is observed for the bottom FGT layer.…”

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

“…The adjacent layers of FGT are connected by weak van der Waals force; therefore, a 0.8 nm ultra-thin single layer structure can be obtained by mechanical exfoliation and transfer process or chemical vapor deposition method, with excellent interface flatness [22,46]. Importantly, upon the composition, doping, and/or bandgap engineering, such ultra-thin FGT still maintains the high magnetic anisotropy and high thermal stability, showing the unique advantages as a cornerstone of building blocks for nano-scale, highly reliable, and time-and energy-efficient spintronic devices [33,47]. Recently, the molecular beam epitaxy/chemical vapor deposition method is applied in the preparation of FGT [17,36], which further broadens the large-scale application prospects of FGT materials.…”

Nonreciprocal Antisymmetric Magnetoresistance and Unconventional Hall Effect in a Two-Dimensional Ferromagnet

“…5 Due to their ability to preserve strong out-of-plane anisotropy even at atomically thin layers, these materials exhibit significant potential in fundamental spintronics devices including giant tunneling magnetoresistance, 6,7 spin transfer torque, 8,9 and spin−orbit torque. 10,11 However, from an application standpoint, the Curie temperature (T c ) of the discovered 2D magnetic materials is rarely above room temperature, which considerably restricts their potential application scenarios. Therefore, the search for 2D materials exhibiting high-temperature (>300 K) ferromagnetism has become imperative.…”

“…Since the discovery of intrinsic two-dimensional (2D) ferromagnetic materials such as Fe 3 GeTe 2 , CrGeTe 3 , CrI 3 , and Fe 1/3 TaS 2 , researchers have had the opportunity to explore low-dimensional magnetism down to the monolayer and have obtained plentiful platforms to investigate the intriguing fundamental physics along with spintronic device applications . Due to their ability to preserve strong out-of-plane anisotropy even at atomically thin layers, these materials exhibit significant potential in fundamental spintronics devices including giant tunneling magnetoresistance, , spin transfer torque, , and spin–orbit torque. , …”