We have reported the enhanced field emission properties of quasialigned 3C-SiC nanowires synthesized via catalyst assisted pyrolysis of polysilazane. The as-synthesized Al-doped SiC nanowires possess a tapered and bamboo-like structure with clear and tiny tips sized in several to tens of nanometers. The fabricated SiC nanowires have extremely low turn-on fields of 0.55−1.54 V μm−1 with an average of ∼1 V μm−1, which is the lowest one ever reported for any type of SiC emitters. The field-enhancement factor has been calculated to be 2983. The superior FE properties can be clearly attributed to the significant enhancements of the tapered and bamboo-like unique morphology and Al doping of SiC nanowires. Density functional theory calculations suggest that Al dopants in 3C-SiC nanowires could favor a more localized state near the Fermi energy, which improves the electron field emissions. We strongly believe that the present work will open a new insight in the fabrication of field emission sources with ultralow turn-on fields enhanced by both shape and doping.

The current trend with integrated energy-storage units in portable electronics lies in continuous advancements in nanostructured materials, thin-film manufacture technologies, and device architectures with enhanced functionality and reliability of existing components. Despite this, it is still challenging to provide cost-efficient solution to further improve the energy and power densities and cyclability of supercapacitors (SCs), especially at ultrafast rates while maintaining their environmentally friendly and even well-run at arbitrary harsh environments character. In this contribution, we report the fabrication of quasi-aligned single crystalline 3C-SiC nanowire (3C-SiCNW) array with tailored shapes and nitrogen-doping (N-doping). The resultant large-scale SiCNWs were directly grown on the surface of a flexible carbon fabric via a simple chemical vapor deposition method. We found that the SC performance of SiCNW arrays can be substantially enhanced by nitrogen doping, which could favor a more localized impurity state near the conduction band edge that greatly improves the quantum capacitance and hence increases the bulk capacitance and the high-power capability. The measured areal capacitances are higher with values of 4.8 and 4.7 mF cm(-2), in aqueous and gel electrolytes, respectively. The all-solid-state flexible textile-based SCs (TSCs) made with these electrodes are mechanically robust under bent and twisted states. Further, they show a power density of 72.3 mW cm(-2) that is higher than that of electrolytic capacitors, and an energy density of 1.2 × 10(-4) mW·h cm(-2), in association with superior rate ability, cyclability, and being environmentally friendly. Such SiCNW-TSC devices allow for operations at ultrahigh rate up to 30 V s(-1), 2 orders of magnitude higher than that of conventional supercapacitors. All these data are comparable to the reported results for 1D nanostructure-based carbon nanotubes (CNTs) or graphenes, thus showing the promising application as large-area flexible textile electronics.