Self-assembled monolayers (SAMs) have been widely employed as an effective way to modify interfaces of electronic/optoelectronic devices. To achieve a good control of the growth and molecular functionality of SAMs, we develop a co-assembled monolayer (co-SAM) for obtaining efficient hole selection and suppressed recombination at the hole-selective interface in inverted perovskite solar cells (PSCs). By engineering the position of methoxy substituents, an aligned energy level and favorable dipole moment can be obtained in our newly synthesized SAM, ((2,7-dimethoxy-9H-carbazol-9-yl) methyl) phosphonic acid (DC-PA). An alkyl ammonium containing SAM is co-assembled to further optimize the surface functionalization and interaction with perovskite layer on top. A champion device with an excellent power conversion efficiency (PCE) of 23.59 % and improved device stability are achieved. This work demonstrates the advantage of using co-SAM in improving performance and stability of PSCs.

High-performance and fully transparent droplet energy harvesting panels for hybrid rain-solar energy harvesting and self-powered forest monitoring.

Softening of piezoelectric materials facilitates the development of flexible wearables and energy harvesting devices. However, as one of the most competitive candidates, piezoelectric ceramic-polymer composites inevitably exhibit reduced power-generation capability and weak mechanical strength due to the mismatch of strength and permittivity between the two phases inside. Herein a flexible, air-permeable, and high-performance piezoceramic textile composite with a mechanically reinforced hierarchical porous structure is introduced. Based on a template-assisted sol-gel method, a three-order hierarchical ceramic textile is constructed by intertwining submillimeter-scale multi-ply ceramic fibers that are further formed by twisting micrometer-scale one-ply ceramic fibrils. Theoretical analysis indicates that large mechanical stress can be easily induced in the multi-order hierarchical structure, which greatly benefits the electrical output. Fabricated samples generate an opencircuit voltage of 128 V, a short-circuit current of 120 µA, and an instantaneous power density of 0.75 mW cm −2 , much higher than the previously reported works. The developed multi-order and 3D-interconnected piezoceramic textile shows satisfactory piezoelectricity (d 33 of 190 pm V −1 ), air permeability (45.1 mm s −1 ), flexibility (Young's modulus of 0.35 GPa), and toughness (0.125 MJ m −3 ), collectively. The design strategy of obtaining balanced properties promotes the practicality of smart/functional materials in wearables and flexible electronics.

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The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V−1 s−1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility "Image missing".

Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi 2 O 2 Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi 2 O 2 Se type-II diodes show a high rectification ratio of 3.6 × 10 4 . Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W −1 (100 mV bias) and 768.8 mA W −1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light-matter interactions for further performance enhancement of photoelectronic devices.

A flexible wood-templated piezoelectric ultrasonic energy harvester exhibits a high output voltage and power, demonstrating potential applications in implantable devices.

Photovoltaic (PV) and thermoradiative (TR) devices are power generators that use the radiative energy transfer between a hot and a cold reservoir. For PV devices, the semiconductor at the cold side (PV cell) generates electric power; for TR devices, the semiconductor at the hot side (TR cell) generates electric power. In this work, we compare the performance of the photovoltaic and thermoradiative devices, with and without the non-radiative processes. Without non-radiative processes, PV devices generally produce larger output powers than TR devices. However, when non-radiative processes become important, the TR can outperform the PV devices. This conclusion applies to both far-field and near-field based devices. A key difference in efficiency between PV and TR devices is pointed out. Journal of Applied PhysicsThis work may not be copied or reproduced in whole or in part for any commercial purpose. Permission to copy in whole or in part without payment of fee is granted for nonprofit educational and research purposes provided that all such whole or partial copies include the following: a notice that such copying is by permission of Mitsubishi Electric Research Laboratories, Inc.; an acknowledgment of the authors and individual contributions to the work; and all applicable portions of the copyright notice. Copying, reproduction, or republishing for any other purpose shall require a license with payment of fee to Mitsubishi Electric Research Laboratories, Inc. All rights reserved.Photovoltaic (PV) and thermoradiative (TR) devices are power generators that use the radiative energy transfer between a hot and a cold reservoir. For PV devices, the semiconductor at the cold side (PV cell) generates electric power; for TR devices, the semiconductor at the hot side (TR cell) generates electric power. In this work, we compare the performance of the photovoltaic and thermoradiative devices, with and without the non-radiative processes. Without non-radiative processes, PV devices generally produce larger output powers than TR devices. However, when non-radiative processes become important, the TR can outperform the PV devices. This conclusion applies to both far-field and near-field based devices. A key difference in efficiency between PV and TR devices is pointed out.