Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Abstract

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V−1 s−1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility "Image missing".

Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

“…The following are proposed to overcome this issue: (1) E g enlargement through Se alloying 48 or dimension down to the quantum limit 22 and (2) device engineering through external doping or dielectric encapsulation 49 . In addition, it is worthwhile to consider optimization of the deposition procedures (e.g., substrate temperature, nucleation layer, and deposition rate) and associated film quality in conjunction with contact/dielectric interface engineering, to further improve electrical properties 50 – 52 .…”

Molybdenum‐Based Nanomaterials for Photothermal Cancer Therapy

“…Except for the aforementioned Mo-NMs themselves, they can be also used to hybridize with other kinds of nanomaterials, such as noble metals, metal oxides, metal chalcogenides, and organic molecules, to prepare molybdenum-based nanocomposites. [121][122][123][124] Among these Mo-NMs, MoS 2 nanosheets are the most widely used templates to further grow other nanomaterials. [66,73,[78][79][80][81][125][126][127][128][129][130][131][132][133][134][135] For example, they can be used to deposit noble metals, such as Au nanoparticles and nanorods, to prepare MoS 2 -templated Au nanocomposites.…”

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

“…17 It has been demonstrated that the Te field-effect transistors (FETs) exhibit unnoticeable degradation upon exposure to air for several months. 18,19 The room- temperature hole mobility of Te reaches 1300 cm 2 V −1 s −1 , 20 making it a promising successor to BP for high-performance, non-cryogenic infrared photodetectors. In particular, the highthroughput preparation of monocrystal 2D Te nanosheets with a lateral size of over 100 μm could be easily achieved via solution-processed methods.…”