All-inorganic CsPbBi I perovskite film was successfully fabricated by incorporating Bi in CsPbI to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPbBi I/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPbBi I/ITO device potential application for multilevel data storage in a nonvolatile memory device.

Lead halide perovskites‐based memory devices have attracted considerable interest due to their unique current–voltage (I–V) hysteresis. Herein, all‐inorganic CsPbI3 perovskite film surviving 30 d of air storage is prepared by using a poly‐vinylpyrrolidone‐assisted passivation method under fully open‐air condition. Afterwards, a memory device with a sandwich structure of Ag/CsPbI3/indium tin oxide is manufactured. From I–V characteristics of pristine device, a spontaneous reaction between the active Ag electrode and I− ions under air exposure is suggested. Furthermore, complete degradation of Ag electrode and formation of AgIx are verified, which also accompanies with generation of more iodine vacancies (VI) in perovskite film. The memory device with AgIx layer shows a bipolar resistive switching behavior, ultrahigh ON/OFF ratio (above 106), nonvolatile, reliable, and reproducible switching performance. Cell area and temperature dependent characteristics propose that the resistive switching is dominated by VI filament in low‐resistance state and thermally assisted hopping in high‐resistance state. This study provides a new insight to understand switching behavior from the way of electrode degradation and metal iodide formation in lead iodide perovskites‐based memory devices and also suggests a potential application for AgIx‐induced resistive switching in CsPbI3‐based memory device.

Via the hydrothermal method, we synthesized MoS2 nanosheets with varying Co dopant concentrations of 0%, 3%, 7%, using cobaltous acetate as a promoter, and marked as A, B, and C, respectively. We found that the thickness and flatness of the nanosheets increased with the increase of the Co dopant concentrations. Meanwhile, the BET surface area of samples (A, B, and C) decreased with the increase of the Co dopant concentrations. Optical absorption spectroscopy showed that, compared to sample A, the A1 and B1 excitons of samples B and C were 10 and 23 meV redshifted, respectively. Then, we performed magnetization measurement to investigate the effect of Co-doping; the unique result implied that the values of the magnetic moment decreased with the increase of the Co dopant concentrations. We performed DFT computations to address the above magnetic result. The computational result indicated that the value of the magnetic moment decreased with the increase of the Co dopant concentrations, which is in agreement with the results of the experiments described above.

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The Bloch oscillation (BO) and Wannier-Stark localization (WSL) are fundamental concepts about metal-insulator transitions in condensed matter physics. These phenomena have also been observed in semiconductor superlattices and simulated in platforms such as photonic waveguide arrays and cold atoms. Here, we report experimental investigation of BOs and WSL simulated with a 5-qubit programmable superconducting processor, of which the effective Hamiltonian is an isotropic XY spin chain. When applying a linear potential to the system by properly tuning all individual qubits, we observe that the propagation of a single spin on the chain is suppressed. It tends to oscillate near the neighborhood of their initial positions, which demonstrates the characteristics of BOs and WSL. We verify that the WSL length is inversely correlated to the potential gradient. Benefiting from the precise single-shot simultaneous readout of all qubits in our experiments, we can also investigate the thermal transport, which requires the joint measurement of more than one qubits. The experimental results show that, as an essential characteristic for BOs and WSL, the thermal transport is also blocked under a linear potential. Our experiment would be scalable to more superconducting qubits for simulating various of out-of-equilibrium problems in quantum many-body systems.

Herein, porous NiCo2S4/CNTs nanocomposites were synthesized via a simple hydrothermal method followed by the sulphurization process using different sulfide sources. By comparing two different sulfur sources, the samples using thioacetamide as sulfide source delivered more remarkable electrochemical performance with a high specific capacitance of 1765 F g−1 at 1 A g−1 and an admirable cycling stability with capacitance retention of 71.7% at a high current density of 10 A g−1 after 5000 cycles in 2 M KOH aqueous electrolyte. Furthermore, an asymmetric supercapacitor (ASC) device was successfully fabricated with the NiCo2S4/CNTs electrode as the positive electrode and graphene as the negative electrode. The device provided a maximum energy density of 29.44 W h kg−1 at a power density of 812 W kg−1. Even at a high power density of 8006 W kg−1, the energy density still reaches 16.68 W h kg−1. Moreover, the ASC presents 89.8% specific capacitance retention after 5000 cycles at 5 A g−1. These results reveal its great potential for supercapacitors in electrochemical energy storage field.

Multipartite entangled states are significant resources for both quantum information processing and quantum metrology. In particular, non-Gaussian entangled states are predicted to achieve a higher sensitivity of precision measurements than Gaussian states. On the basis of metrological sensitivity, the conventional linear Ramsey squeezing parameter (RSP) efficiently characterizes the Gaussian entangled atomic states but fails for much wider classes of highly sensitive non-Gaussian states. These complex non-Gaussian entangled states can be classified by the nonlinear squeezing parameter (NLSP), as a generalization of the RSP with respect to nonlinear observables, and identified via the Fisher information. However, the NLSP has never been measured experimentally. Using a 19-qubit programmable superconducting processor, we report the characterization of multiparticle entangled states generated during its nonlinear dynamics. First, selecting 10 qubits, we measure the RSP and the NLSP by single-shot readouts of collective spin operators in several different directions. Then, by extracting the Fisher information of the time-evolved state of all 19 qubits, we observe a large metrological gain of 9.89 +0.28 −0.29 dB over the standard quantum limit, indicating a high level of multiparticle entanglement for quantum-enhanced phase sensitivity. Benefiting from high-fidelity full controls and addressable single-shot readouts, the superconducting processor with interconnected qubits provides an ideal platform for engineering and benchmarking non-Gaussian entangled states that are useful for quantum-enhanced metrology.

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