Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb_1–xBi_xI₃ Perovskite-Based Memory Device

Abstract

All-inorganic CsPbBi I perovskite film was successfully fabricated by incorporating Bi in CsPbI to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPbBi I/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPbBi I/ITO device potential application for multilevel data storage in a nonvolatile memory device.

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

“…Interestingly, these hysteresis phenomena are favorable for resistive switching and further provide an opportunity for lead halide perovskites as active layers to apply in memory devices. Therefore, lead halide perovskites‐based memory devices recently receive considerable interest, and they exhibit more outstanding performances, such as, low operating voltage, high on/off ratio, multilevel data storage, good mechanical flexibility, and light sensitivity …”

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

“…de As compared to organic-inorganic hybrid counterpart, the allinorganic halide perovskite demonstrates high ambient stability toward environmental factors, for example, moisture, heat, and light. [20] There are two mainstream mechanisms which are responsible for the RS behavior in memory devices, valence change memories relating to the formation/rupture of vacancy conductive filaments (CFs) and electrochemical metallization memories relating to the formation/ rupture of metallic CFs. [20] There are two mainstream mechanisms which are responsible for the RS behavior in memory devices, valence change memories relating to the formation/rupture of vacancy conductive filaments (CFs) and electrochemical metallization memories relating to the formation/ rupture of metallic CFs.…”

“…[19][20][21] The application of CsPbI 3 in RS memory filed is limited by its unstable crystal structure, which tends to degrade rapidly from perovskite phase to the non-perovskite phase under open-air conditions and at room temperature. [19][20][21] The application of CsPbI 3 in RS memory filed is limited by its unstable crystal structure, which tends to degrade rapidly from perovskite phase to the non-perovskite phase under open-air conditions and at room temperature.…”

“…[19][20][21] The application of CsPbI 3 in RS memory filed is limited by its unstable crystal structure, which tends to degrade rapidly from perovskite phase to the non-perovskite phase under open-air conditions and at room temperature. [20] Hence, the CsPbBr 3 was chosen as the switching layer to fabricate the RS memory devices in this work. [20] Hence, the CsPbBr 3 was chosen as the switching layer to fabricate the RS memory devices in this work.…”

“…[14][15][16][17] To date, most studies have focused on the organicinorganic hybrid halide perovskites. [19][20][21] All-inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic-inorganic hybrid halide perovskites. [18] Therefore, to obtain air-stable halide perovskites, replacing instable organic cations by stable cations is of great importance.…”