Bimetallic iron–nickel sulfide nanowall arrays supported on nickel foam (Fe11.1%–Ni3S2/Ni foam) could efficiently drive both the overall water and urea electrolysis.
A broad
spectral response is highly desirable for radiation detection
in modern optoelectronics; however, it still remains a great challenge.
Herein, we report a novel ultrabroadband photodetector based on a
high-quality tin monoselenide (SnSe) thin film, which is even capable
of detecting photons with energies far below its optical band gap.
The wafer-size SnSe ultrathin films are epitaxially grown on sodium
chloride via the 45° in-plane rotation by employing a sputtering
method. The photodetector delivers sensitive detection to ultraviolet–visible–near
infrared (UV–Vis–NIR) lights in the photoconductive
mode and shows an anomalous response to long-wavelength infrared at
room temperature. Under the mid-infrared light of 10.6 μm, the
fabricated photodetector exhibits a large photoresponsivity of 0.16
A W–1 with a fast response rate, which is ∼3
orders of magnitude higher than other results. The thermally induced
carriers from the photobolometric effect are responsible for the sub-bandgap
response. This mechanism is confirmed by a temperature coefficient
of resistance of −2.3 to 4.4% K–1 in the
film, which is comparable to that of the commercial bolometric detectors.
Additionally, the flexible device transferred onto polymer templates
further displays high mechanical durability and stability over 200
bending cycles, indicating great potential toward developing wearable
optoelectronic devices.
A novel few-layer MoS2/SiO2/Si heterojunction is fabricated via DC magnetron sputtering technique, and Pd nanoparticles are further synthesized on the device surface. The results demonstrate that the fabricated sensor exhibits highly enhanced responses to H2 at room temperature due to the decoration of Pd nanoparticles. For example, the Pd-decorated MoS2/SiO2/Si heterojunction shows an excellent response of 9.2 × 103% to H2, which is much higher than the values for the Pd/SiO2/Si and MoS2/SiO2/Si heterojunctions. In addition, the H2 sensing properties of the fabricated heterojunction are dependent largely on the thickness of the Pd-nanoparticle layer and there is an optimized Pd thickness for the device to achieve the best sensing characteristics. Based on the microstructure characterization and electrical measurements, the sensing mechanisms of the Pd-decorated MoS2/SiO2/Si heterojunction are proposed. These results indicate that the Pd decoration of few-layer MoS2/SiO2/Si heterojunctions presents an effective strategy for the scalable fabrication of high-performance H2 sensors.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2335-y) contains supplementary material, which is available to authorized users.
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