Giant lateral photovoltaic effect in MoS2/SiO2/Si p-i-n junction

Hao, Lanzhong; Liu, Y.J.; Han, Zhongying; Xu, Zhijie; Zhu, Jing

doi:10.1016/j.jallcom.2017.11.094

Cited by 37 publications

(25 citation statements)

References 60 publications

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“…Consequently, surface bands bending and a built-in electric field forms, generating depletion layer as well as an inversion layer. The inversion layer can provide a high speed path for carrier transport, which has been confirmed by previous studies [13,14,[27][28][29]. For lightly n-doped Si, the surface bands bend upwards, leading to the electric field directing from bulk Si to the surface (Figure 4).…”

Section: Mechanism For Ultrasensitive Graphene Psdsupporting

confidence: 80%

“…In addition, for the purposes of eye safety and concealment, the infrared light is the routine operating wavelength for sensing systems, which is also a bottleneck for PSD based on these structures due to the weak light absorption and lack of gain. Recently, by virtue of the excellent properties, various two-dimensional materials have been employed to fabricate PSDs and some new structures were proposed [11][12][13][14][15][16]. In our previous studies, we designed a graphene-based PSD using interfacial amplification [15], and its detection limit power can be reduced to nw level by introducing gain.…”

Section: Introductionmentioning

confidence: 99%

“…While in our previously reported PSD based on interfacial amplification effect, photogenerated electrons at the interface of SiO 2 /Si cause a gating effect and a high photoresponse. For both of them, only one type of carrier (electron or hole) contributes to photoresponse and position sensitivity [12][13][14][15][16][17]. Here, we present an ultrasensitive graphene based PSD on lightly n-doped Si substrate by using synergistic effect of charge injection and interfacial gating.…”

Section: Introductionmentioning

confidence: 99%

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Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

Wang

Sun

et al. 2020

Nanophotonics

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AbstractPosition-sensitive detectors (PSDs) are essential components to the realization of displacement and vibration detection, optical remote control, robot vision, etc. The light sensitivity of PSDs is a crucial parameter, which determines the operating range or detection accuracy of the measurement systems. Here, we devise an ultrasensitive PSD based on graphene/Si hybrid structure by using the synergistic effect of charge injection and interfacial gating. Photogenerated carriers in Si are separated by the built-in electric field at the surface. Holes diffuse laterally in inversion layer and then inject into graphene to form photoresponse. Meanwhile, the electrons in bulk Si that move to the area under graphene cause a gating effect, thus introducing a high gain. With the benefit of synergistic effect, the detection limit power of our device can be pushed to pW level, which is reduced by two orders of magnitude compared to previously reported graphene based PSD. Furthermore, even for infrared light of 1064 nm, the PSD still retains position sensitivity to 1 nW weak light, as well as fast response speed at the μs level. This work provides the potential of graphene as a promising material for ultraweak light position sensitive detection.

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Section: Mechanism For Ultrasensitive Graphene Psdsupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

Wang

Sun

et al. 2020

Nanophotonics

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“…The fundamental concept of the proposed device operation is based on the generation of a lateral photovoltaic effect due to the nonuniform illumination by photons, in addition to the ordinary longitudinal photovoltaic effect, as shown in Figure e . The nonuniform photon illumination of the device causes a carrier density gradient, which in turn induces lateral diffusion and generates an in‐plane photocurrent.…”

mentioning

confidence: 99%

A Transparent Photonic Artificial Visual Cortex

2019

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Mimicking brain‐like functionality with an electronic device is an essential step toward the design of future technologies including artificial visual and memory applications. Here, a proof‐of‐concept all‐oxide‐based (NiO/TiO2) highly transparent (54%) heterostructure is proposed and demonstrated, which mimics the primitive functions of the visual cortex. Specifically, orientation selectivity and spatiotemporal processing similar to that of the visual cortex are demonstrated using direct optical stimuli under the self‐biased condition due to photovoltaic effect, illustrating an energy‐efficient approach for neuromorphic computing. The photocurrent of the device can be modulated from zero to 80 µA by simply rotating the slit by 90°. The device shows fast rise and fall times of 3 and 6 ms, respectively. Based on Kelvin probe force measurements, the observed results are attributed to a lateral photovoltaic effect. This highly transparent, self‐biased, photonic triggered device paves the way for the advancement of energy‐efficient neuromorphic computation.

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“…Hitherto, LPE gets widely used in photoelectric detection and is considered as an effective method to measure the characteristics of materials . A deeper understanding of hot functional materials, including transition metal dichalcogenides (TMDCs), carbon isotope, III‐V compound semiconductor, MS, and graphene, could be learned from experiments of LPE. Moreover, even the surface states of a doped semiconductor can induce a conspicuous LPE .…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Giant lateral photovoltaic effect in MoS2/SiO2/Si p-i-n junction

Cited by 37 publications

References 60 publications

Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

A Transparent Photonic Artificial Visual Cortex

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

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