We describe a simple process for the fabrication of ultrathin, transparent, optically homogeneous, electrically conducting films of pure single-walled carbon nanotubes and the transfer of those films to various substrates. For equivalent sheet resistance, the films exhibit optical transmittance comparable to that of commercial indium tin oxide in the visible spectrum, but far superior transmittance in the technologically relevant 2- to 5-micrometer infrared spectral band. These characteristics indicate broad applicability of the films for electrical coupling in photonic devices. In an example application, the films are used to construct an electric field-activated optical modulator, which constitutes an optical analog to the nanotube-based field effect transistor.

Highly conductive copper nanowires (CuNWs) are essential for efficient data transfer and heat conduction in wide ranging applications like high-performance semiconductor chips and transparent conductors. However, size scaling of CuNWs causes severe reduction in electrical and thermal conductivity due to substantial inelastic surface scattering of electrons. Here we report a novel scalable technique for low-temperature deposition of graphene around CuNWs and observe strong enhancement of electrical and thermal conductivity for graphene-encapsulated CuNWs compared to uncoated CuNWs. Fitting the experimental data with the theoretical model for conductivity of CuNWs reveals significant reduction in surface scattering of electrons at the oxide-free CuNW surfaces, translating into 15% faster data transfer and 27% lower peak temperature compared to the same CuNW without the graphene coating. Our results provide compelling evidence for improved speed and thermal management by adapting the Cu-graphene hybrid technology in future ultrascaled silicon chips and air-stable flexible electronic applications.

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Homogeneous films of pure single wall carbon nanotubes (SWNTs) sufficiently thin to be optically transparent in the visible range of the spectrum were employed as p-Ohmic contacts on GaN−InGaN quantum-well light-emitting diodes. The specific contact resistance of the SWNT films on the p-GaN was 1.1 × 10-2 Ω cm2 after annealing at 700 °C for 60 s under N2, which was a factor of 3 lower than standard Ni/Au contacts on the same p-GaN. The SWNT-contacted LEDs showed bright blue emission centered at 434 nm and demonstrate that the SWNT films provide a new class of electrically conducting, p-type, transparent electrode for use with photonic devices.

Copper interconnects in modern integrated circuits require a barrier layer to prevent Cu diffusion into surrounding dielectrics. However, conventional barrier materials like TaN are highly resistive compared to Cu and will occupy a large fraction of the crosssection of ultra-scaled Cu interconnects due to their thickness scaling limits at 2-3 nm, which will significantly increase the Cu line resistance. It is well understood that ultrathin, effective diffusion barriers are required to continue the interconnect scaling. In this study, a new class of two-dimensional (2D) materials, hexagonal boron nitride (h-BN) and molybdenum disulfide (MoS 2 ), is explored as alternative Cu diffusion barriers. Based on time-dependent dielectric breakdown measurements and scanning transmission electron microscopy imaging coupled with energy dispersive X-ray spectroscopy and electron energy loss spectroscopy characterizations, these 2D materials are shown to be promising barrier solutions for Cu interconnect technology. The predicted lifetime of devices with directly deposited 2D barriers can achieve three orders of magnitude improvement compared to control devices without barriers.

As the challenges in continued scaling of the integrated circuit technology escalate every generation, there is an urgent need to find viable solutions for both the front-end-of-line (transistors) and the back-end-of-line (interconnects). For the interconnect technology, it is crucial to replace the conventional barrier and liner with much thinner alternatives so that the current driving capability of the interconnects can be maintained or even improved. Due to the inherent atomically thin body thicknesses, 2D materials have recently been proposed and explored as Cu diffusion barrier alternatives. In this Perspective article, a variety of 2D materials that have been studied, ranging from graphene, h-BN, MoS2, WSe2 to TaS2, will be reviewed. Their potentials will be evaluated based on several criteria, including fundamental material properties as well as the feasibility for technology integration. Using TaS2 as an example, we demonstrate a large set of promising properties and point out that there remain challenges in the integration aspects with a few possible solutions waiting for validation. Applications of 2D materials for other functions in Cu interconnects and for different metal types will also be introduced, including electromigration, cobalt interconnects, and radio-frequency transmission lines.

Pulmonary hypertension (PH) is an increasingly recognized complication of systemic lupus erythematosus (SLE). To develop a more comprehensive understanding of the clinical and pathological characteristics of pulmonary hypertension associated with systemic lupus erythematosus (PH/SLE) in the Chinese population, a systematic review of the literature up to 2012 was conducted. Six hundred and forty-two Chinese PH/SLE cases from 22 studies were identified as well documented and further analyzed. Transthoracic echocardiography (TTE), X-ray, electrocardiogram and right heart catheterization (RHC) were performed to diagnose PH in SLE patients. The mean age of subjects was 35.5 years, the male to female ratio was 1:14, and the mean duration of SLE when PH was diagnosed was 10.7 years. The prevalence of PH in SLE was 2.8–23.3 %. Symptoms were usually nonspecific, and the observed clinical characteristics include Raynaud’s phenomenon (41.4 %), serous effusion (27.7 %), positive RNP (51.5 %) and positive ACL (46.6 %). Gold standard RHC is strongly recommended, especially for those who had resting pulmonary arterial systolic pressure >30 mmHg on TTE with the aforementioned clinical characteristics. Corticosteroids, immunosuppressants and vasodilators were the most common medications employed in treatment. Early identification and standard PH treatment with intensive SLE treatment can improve the prognosis.

The interconnect half‐pitch size will reach ≈20 nm in the coming sub‐5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross‐section and they are much more resistive than Cu, the effective conductance of an ultrascaled interconnect will be compromised by the thick bilayer. Therefore, 2D layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back‐end‐of‐line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSx ) with ≈1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultrathin film is industry‐friendly, BEOL‐compatible, and can be directly prepared on dielectrics. The results show superior barrier/liner properties of TaSx compared to the TaN/Ta bilayer. This single‐stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node.