Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

Advanced beyond-silicon electronic technology requires discoveries of both new channel materials and ultralow-resistance contacts 1,2 . Atomically thin two-dimensional (2D) semiconductors have great potential for realizing high-performance electronic devices 1,3 . However, because of metal-induced gap states (MIGS) 4-7 , energy barriers at the metalsemiconductor interface, which fundamentally lead to high contact resistances and poor current-delivery capabilities, have restrained the advancement of 2D semiconductor transistors to date 2,8,9 . Here, we report a novel ohmic contact technology between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where MIGS is sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a record-low contact resistance (R C ) of 123 Ω μm, and a recordhigh on-state current density (I ON ) of 1135 µA µm -1 on monolayer MoS 2 . We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS 2 , WS 2 , and WSe 2 . Our reported R C values are a significant improvement for 2D semiconductors, and approaching the quantum limit. This technology unveils the full potential of high-performance monolayer transistors that are on par with the state-of-the-art 3D semiconductors, enabling further device down-scaling and extending Moore's Law.The electrical contact resistance at a metal-semiconductor (M-S) interface has been an increasingly critical, yet unsolved issue for the semiconductor industry, hindering the ultimate

Transition metal oxides have attracted much interest for their high energy density in lithium batteries. However, the fast capacity fading and the low power density still limit their practical implementation. In order to overcome these challenges, one-dimensional yolk-shell nanorods have been successfully constructed using manganese oxide as an example through a facile two-step sol-gel coating method. Dopamine and tetraethoxysilane are used as precursors to obtain uniform polymer coating and silica layer followed by converting into carbon shell and hollow space, respectively. As anode material for lithium batteries, the manganese oxide/carbon yolk-shell nanorod electrode has a reversible capacity of 660 mAh/g for initial cycle at 100 mA/g and exhibits excellent cyclability with a capacity of 634 mAh/g after 900 cycles at a current density of 500 mA/g. An enhanced capacity is observed during the long-term cycling process, which may be attributed to the structural integrity, the stability of solid electrolyte interphase layer, and the electrochemical actuation of the yolk-shell nanorod structure. The results demonstrate that the manganese oxide is well utilized with the one-dimensional yolk-shell structure, which represents an efficient way to realize excellent performance for practical applications.

Recently, layered transition-metal dichalcogenides (TMDs) have gained great attention for their analogous graphite structure and high theoretical capacity. However, it has suffered from rapid capacity fading. Herein, we present the crumpled reduced graphene oxide (RGO) decorated MoS2 nanoflowers on carbon fiber cloth. The three-dimensional framework of interconnected crumpled RGO and carbon fibers provides good electronic conductivity and facile strain release during electrochemical reaction, which is in favor of the cycling stability of MoS2. The crumpled RGO decorated MoS2 nanoflowers anode exhibits high specific capacity (1225 mAh/g) and excellent cycling performance (680 mAh/g after 250 cycles). Our results demonstrate that the three-dimensional crumpled RGO/MoS2 nanoflowers anode is one of the attractive anodes for lithium-ion batteries.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially non-uniform growth dynamics, it is challenging to grow wafer-scale 2D TMDCs with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design to grow monolayer TMDCs with a uniform density and high quality over the whole wafer, and with excellent reproducibility. The use of such VCVD design can easily control the three key growth parameters of precursor concentration, gas flow and temperature, which cannot be done in currently widely-used horizontal CVD system. Statistical results

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity remains challenging in 2D materials. Here we report in-situ chemical vapor deposition growth of vanadium (V) doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 at%. The key to regulate the doping concentration lies in the use of appropriate V precursors with different doping abilities, which also generate a large-scale uniform doping effect. Artificial synaptic transistors were fabricated by using the heavily doped MoS2 as the channel material for the first time. Synaptic potentiation, depression and repetitive learning processes are mimicked by the gate-tunable channel conductance change in such transistors with abundant V atoms to trap/detrap electrons. This work shows a feasible method to dope monolayer 2D semiconductors and demonstrates their use in artificial synaptic transistors.

No abstract

Development of pseudocapacitor electrode materials with high comprehensive electrochemical performance, such as high capacitance, superior reversibility, excellent stability, and good rate capability at the high mass loading level, still is a tremendous challenge. To our knowledge, few works could successfully achieve the above comprehensive electrochemical performance simultaneously. Here we design and synthesize one interwoven three-dimensional (3D) architecture of cobalt oxide nanobrush-graphene@Ni(x)Co(2x)(OH)(6x) (CNG@NCH) electrode with high comprehensive electrochemical performance: high specific capacitance (2550 F g(-1) and 5.1 F cm(-2)), good rate capability (82.98% capacitance retention at 20 A g(-1) vs 1 A g(-1)), superior reversibility, and cycling stability (92.70% capacitance retention after 5000 cycles at 20 A g(-1)), which successfully overcomes the tremendous challenge for pseudocapacitor electrode materials. The asymmetric supercapacitor of CNG@NCH//reduced-graphene-oxide-film exhibits good rate capability (74.85% capacitance retention at 10 A g(-1) vs 0.5 A g(-1)) and high energy density (78.75 Wh kg(-1) at a power density of 473 W kg(-1)). The design of this interwoven 3D frame architecture can offer a new and appropriate idea for obtaining high comprehensive performance electrode materials in the energy storage field.