Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity remains challenging in 2D materials. Here we report in-situ chemical vapor deposition growth of vanadium (V) doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 at%. The key to regulate the doping concentration lies in the use of appropriate V precursors with different doping abilities, which also generate a large-scale uniform doping effect. Artificial synaptic transistors were fabricated by using the heavily doped MoS2 as the channel material for the first time. Synaptic potentiation, depression and repetitive learning processes are mimicked by the gate-tunable channel conductance change in such transistors with abundant V atoms to trap/detrap electrons. This work shows a feasible method to dope monolayer 2D semiconductors and demonstrates their use in artificial synaptic transistors.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called “dissolution-precipitation” (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.

We present a strong Raman enhancement substrate through one-step thermal treatment of bulk MoS2. The substrate provides very efficient hot spots by using the rhodamine 6G (R6G) molecule as a probe. Raman and photoluminescence spectra of modified MoS2 reveal the detailed mechanism for enhancing Raman signal of R6G. It is found that both the substrate roughness and the slight chemical bond broken on the surface are the main driven forces to induce the surface enhanced Raman scattering (SERS) effects. The minimum detectable concentration of R6G on the most optimized thermally treated MoS2 can be as low as 10–8 M. This synthetic approach is facile, sensitive, and reliable, which shows great potential to be an excellent SERS substrate for biological and chemical detection.

Atomically thin transition metal dichalcogenides (TMDCs) are intriguing semiconductors for photonics and optoelectronics, and therefore enhancing their photoluminescence (PL) efficiency is crucial for these applications. Many efforts have been contributed to enhancing the PL performance of monolayer TMDCs, yet the complexity between the microstructure and the PL efficiency has hindered the manipulation of their PL properties. Here we demonstrate that the PL intensity of the monolayer TMDC can be enhanced by nearly one order of magnitude with a ~20% narrower spectral linewidth after a pre-activation plateau using laser irradiation in ambient environment. Combined experimental and theoretical studies reveal that low-power laser irradiation generates many sulfur vacancy clusters, which are subsequently filled up by oxygen, and the lattice substitutional oxygen clusters induce the dramatic PL enhancement of monolayer WS 2 . Such PL enhancement phenomenon is found to be universal for other monolayer TMDCs, and thus would benefit their versatile optical applications.

Substitutional doping is a powerful strategy to modulate the properties and functionalities of two-dimensional (2D) materials while control of dopants during the process is still challenging. Recently, we invented a dissolution–precipitation (DP) method to grow 2D materials. Here, we further extend this method by developing a double-faced precursor supply DP growth strategy to substitutionally dope metal atoms into monolayer MoS2 lattices. In this double-faced precursor supply DP method, the Mo source and dopant source are supplied from the bottom and top surface of the glass substrate, respectively, to separate their diffusion paths. As a result, monolayer MoS2 incorporated with different concentrations of V atoms were grown by tuning the amount of V precursor, which exhibited different types of electrical transport properties. This new doping method is universal in growing several transition metal atom doped MoS2, including Re, Fe, and Cr, which will extend the applications of 2D materials.

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