Dissolution–precipitation growth of doped monolayer molybdenum disulfide through double-faced precursor supply

Abstract

Substitutional doping is a powerful strategy to modulate the properties and functionalities of two-dimensional (2D) materials while control of dopants during the process is still challenging. Recently, we invented a dissolution–precipitation (DP) method to grow 2D materials. Here, we further extend this method by developing a double-faced precursor supply DP growth strategy to substitutionally dope metal atoms into monolayer MoS2 lattices. In this double-faced precursor supply DP method, the Mo source and dopant source are supplied from the bottom and top surface of the glass substrate, respectively, to separate their diffusion paths. As a result, monolayer MoS2 incorporated with different concentrations of V atoms were grown by tuning the amount of V precursor, which exhibited different types of electrical transport properties. This new doping method is universal in growing several transition metal atom doped MoS2, including Re, Fe, and Cr, which will extend the applications of 2D materials.

Chemical Potential-Modulated Ultrahigh-Phase-Purity Growth of Ultrathin Transition-Metal Boride Single Crystals

“…In our chemical potential-modulated strategy, liquid metal supported by transition-metal foil was employed as the growth substrate. At a high temperature, the transition-metal atoms diffuse to the surface of the substrate as the precursor source. , The metal source in the liquid phase and the boron source in the gas phase supply through different paths, limiting the growth of ultrathin TMB single crystals to the substrate surface, avoiding the occurrence of gas reactions and the formation of byproducts. , Significantly, the atomically smooth surface of the substrate brings about low nucleation density and accelerates the surface diffusion of precursors simultaneously, which provides the uniform distribution of the precursor on the surface, , in response to the homogeneous chemical potential of precursor distribution on the surface. The uniform distribution of the precursor was confirmed by X-ray photoelectron spectroscopy (XPS), as shown in Figure c.…”

Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory

“…Figure shows the preparation process and characteristics of wrinkles in monolayer MoS 2 . The monolayer MoS 2 was synthesized by the dissolution–precipitation chemical vapor deposition (DP CVD) growth method , (See the Methods section for details) and was then transferred by the polyethylene terephthalate (PET)-assisted process. Specifically, a PET stamp was used to pick up the desired MoS 2 flakes from the glass growth substrate at 65 °C.…”

“…Monolayer MoS 2 was grown by dissolution–precipitation (DP) chemical vapor deposition (CVD) methods, as reported in our previous work. , First, a Na 2 MoO 4 solution (4 μL, 1 mol/L in deionized (DI) water) was deposited dropwise onto a 2-mm-thick glass with a size of 1 cm × 1 cm, then dried in an oven at 60 °C for 1 h. Afterward, a thin glass (1 cm × 1 cm in size, 0.5 mm in thickness) was placed on top of the above-mentioned thick glass, which was sealed together at 660 °C to form a sandwiched structure made of thin glass/Na 2 MoO 4 /thick glass. Subsequently, the sandwiched structure was placed at the center of a horizontal furnace, and sulfur powders were loaded upstream (100 mg).…”

Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides

“…The precursor solution in the LPI-CVD process enables the homogeneous mixing of multiple precursors at the molecular level to facilitate the growth of wafer-scale 2D TMDs. 95 For the controllable growth of larger area and higher quality TMDs with more excellent physical performance, various assisted treatments based on LPI-CVD strategies were implemented mainly including molten-salt assisted, hydroxide-assisted, polymer-assisted, and supply of novel chalcogen precursor LPI-CVD. In addition, the recent progress of atomically doped monolayer 2D TMDs was summarized.…”