A non-iterative method is presented to accurately extract the five parameters of single diode model of solar cells in this paper. This method overcomes the problems of complexity and accuracy by simplifying the calculation process. Key parts of the equation are to be adjusted dynamically so that the desired five parameters can be obtained from the I–V curve. Then, the I-V and P-V characteristic curves of solar cells are used to compare the effectiveness of this method with other methods. Furthermore, the root mean square error analysis shows that this method is more applicable than other methods. Finally, the I-V and P-V characteristics simulated by using the extracted parameters in this method are compared and discussed with the experimental data of solar cells under different conditions. In fact, this extraction process can be regarded as an effective and accurate method to estimate solar cells’ single diode model parameters.
Zirconia fibrous ceramics with high porosity (porosity=70-90%) were fabricated and investigated for high-temperature thermal protection applications. Two types of zirconia fibers, tetragonal and cubic phases, were compared. The results showed that the ceramics made of cubic-phase fibers had lower room-temperature thermal conductivity and lower mechanical strength. In addition, the effects of fiber diameter on the properties were also studied. Using the fibers with smaller diameter, the sample's thermal conductivity decreased, but the compressive strength also decreased slightly. It was found that the ceramics' room-temperature thermal conductivity and mechanical strengths varied with porosity linearly or exponentially, respectively. The ceramics' thermal expansion and thermal capacity in the range of RT~900 were measured. The high ℃ ℃ ℃ ℃ -temperature insulation performance was evaluated by back temperature tests. Finally, the porous ceramics were impregnated with aerogels. The room-temperature as well as high-temperature thermal conductivities both decreased. Therefore, the zirconia fibrous ceramics is a promising candidate for high-temperature insulation applications. Nomenclature ρ = density λ RT = room-temperature thermal conductivity λ HT = high-temperature thermal conductivity σ c = compressive strength σ t = tensile strength α = average linear thermal expansion C p = average thermal capability
An analytical surface-potential-based drain current model for amorphous indium–gallium–zinc–oxide (a-InGaZnO) thin film transistors (TFTs) is proposed by introducing an effective charge density approach in this paper. This approach gives two initial approximate values of the effective state density and the effective thermal voltage by using the dominant state of the free charge density in total charge density, and then obtains a high-precision one-exponent equivalent transformation for three-exponent total charge density. Based on this approach, we have solved the problem that the physical meaning of the transition area in the regional method is not clear and a one-piece analytical surface potential solution to Poisson’s equation is successfully derived. Furthermore, the drain current is also explicitly derived from the charge sheet model and I-V characteristics of a-InGaZnO TFTs are reproduced from the above obtained model. Finally, accurate and effective surface-potential model and drain current model are obtained and verified by experimental data, respectively. Good verification results prove that the proposed model could become an accurate and suitable tool for being embedded into a circuit simulation.
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