Abstract:An analytical surface-potential-based drain current model for amorphous indium–gallium–zinc–oxide (a-InGaZnO) thin film transistors (TFTs) is proposed by introducing an effective charge density approach in this paper. This approach gives two initial approximate values of the effective state density and the effective thermal voltage by using the dominant state of the free charge density in total charge density, and then obtains a high-precision one-exponent equivalent transformation for three-exponent total cha… Show more
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