Zhao Wen scite author profile

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.

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Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

Chen

Zhang

Chen

et al. 2017

IEEE Trans. Nucl. Sci.

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Analysis of Mode III Collinear Periodic Cracks-Tip Stress Field of an Infinite Orthotropic Plate

Zhang¹,

Li²,

Cui³

et al. 2012

AMR

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Zhao Wen

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Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

Single-event multiple transients in guard-ring hardened inverter chains of different layout designs

Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

Analysis of Mode III Collinear Periodic Cracks-Tip Stress Field of an Infinite Orthotropic Plate

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