We present the high-temperature characteristics of Ti/Al/Ni/Au(15 nm/220 nm/40 nm/50nm) multiplayer contacts to n-type GaN (Nd = 3.7 × 1017 cm−3, Nd = 3.0 × 1018 cmT−3). The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the Al layer even the Ti layer.
The ohmic contact and photoresponse of a ZnO single crystal film by metalorganic chemical vapor deposition (MOCVD) were investigated. The electrical and photoresponsive changes in the ZnO film due to RF sputter deposition of SiO 2 (antireflection coating) were also discussed. The experimental results show that the non-alloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO, RF sputter deposition of SiO 2 induces defects which behave as carrier traps and prolong response time, and the photoresponse of ZnO epitaxial film deteriorates with time.
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