Ge implanted with 1 MeV Si + at a dose of 1 ϫ 10 15 cm −2 creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects-end-of-range ͑EOR͒, regrowth-related, and clamshell defects. Unlike Si, no planar ͕311͖ defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.

Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the ͑001͒ Ge and Si wafers implanted with 1 MeV Si + and 40 keV Si + at a dose of 1 ϫ 10 14 cm −2 . As expected, upon annealing, the ͕311͖ extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no ͕311͖ defect formation is observed for this nonamorphizing implant after annealing at temperatures between 350 and 850°C. Instead, for the MeV implant, small dotlike defects are observed in Ge, which dissolve upon annealing between 650 and 750°C for 10 min.