Regrowth-related defect formation and evolution in 1MeV amorphized (001) Ge

Hickey, D P; Bryan, Z. L.; Jones, K. S.; Elliman, R. G.; Haller, E. E.

doi:10.1063/1.2717538

Cited by 20 publications

(19 citation statements)

References 23 publications

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“…2 Recently Hickey et al reported on defect formation and evolution during regrowth of amorphized ion-implanted Ge. 3 They observed regrowth related defects in annealed 1 MeV Si implanted Ge. End of range defects were minimal and annealed out between 450 and 550°C while regrowth defects were more stable.…”

Section: Introductionmentioning

confidence: 99%

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

et al. 2008

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Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1 ϫ 10 12 cm −2 and 4 ϫ 10 14 cm −2 . Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1 ϫ 10 13 cm −2 and a fluence of 1 ϫ 10 14 cm −2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200-400°C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.

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Section: Introductionmentioning

confidence: 99%

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

et al. 2008

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“…[14][15][16] Recently, some progress in understanding the role of self-interstitials in Ge came from investigations on the migration of B, whose diffusivity is the lowest among all the impurities in Ge.…”

Section: Introductionmentioning

confidence: 99%

Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters

et al. 2011

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The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650• C following O implants produces a band of defects (∼5-10 nm), compatible with GeO 2 nanoclusters (NCs). A clear shape transformation from elongated to spherical forms occurs within 2 h, concomitant with a transient enhanced diffusion of B. A large injection of self-interstitials from GeO 2 NCs, giving a vacancy undersaturation, and a long-range migration of self-interstitials are evidenced and discussed.

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“…It should be noted that no threading dislocations or regrowthrelated defects are observed comparing to Si self-ion implantation 14,19 or like recently observed in Ge when amorphized by Si ions where after 650 C anneal a high density of threading dislocations is still present. 20 Moreover, at the anneal temperatures used, no {311} defects are formed. In selfimplanted Si at RT or at 77 K, {311} defects are already formed after annealing at the end of range region.…”

Section: A Buried Amorphous Layermentioning

confidence: 99%

“…Lithiation will then rather easily lead to destabilization of the host Si network (i.e., amorphization) and subsequent formation of new Si x Li y alloy phases, accompanied with significant volume expansion. 25 Crystalline silicon amorphizes at a ratio of 0.3 Li atoms per Si atom, 26 which means for a local Li concentration of 1.5 Â 10 22 at/cm 3 , i.e., far from our implanted maximum of 2.5 Â 10 20 Li/cm 3 . Thus, in the first step of recrystallization, Li atoms must stay in interstitial position and should not play a significant role.…”

Section: A Buried Amorphous Layermentioning

confidence: 99%

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Oliviero

David

Fichtner

et al. 2013

Journal of Applied Physics

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The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation. V C 2013 American Institute of Physics.

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Regrowth-related defect formation and evolution in 1MeV amorphized (001) Ge

Cited by 20 publications

References 23 publications

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

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