Defects in Ge and Si caused by 1MeV Si+ implantation

Hickey, D P; Bryan, Z. L.; Jones, K. S.; Elliman, R. G.; Haller, E. E.

doi:10.1116/1.2834557

Cited by 10 publications

(8 citation statements)

References 20 publications

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“…Full recrystallization, however, was achieved by a 450°C anneal, while residual crystal damage was observed below the original a/c interface, agreeing with Ref. 15.…”

supporting

confidence: 86%

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

Hellings

Wuendisch

Eneman

et al. 2009

Electrochem. Solid-State Lett.

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We investigated the as-implanted profiles, electrical activation, diffusion, and recrystallization of gallium implanted in germanium samples through the combination of secondary-ion mass spectrometry, transmission electron microscopy, and sheet resistance measurement. Because of their high activation level ͑4.4 ϫ 10 20 cm −3 ͒ without preamorphization, low activation temperature ͑400°C͒, and absence of diffusion ͑up to 700°C͒, Ga junctions in crystalline Ge are very promising candidates for implementation in germanium technology. In the amorphous Ge phase, an increased diffusivity of Ga was observed at temperatures above 400°C.

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“…Full recrystallization, however, was achieved by a 450°C anneal, while residual crystal damage was observed below the original a/c interface, agreeing with Ref. 15.…”

supporting

confidence: 86%

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

Hellings

Wuendisch

Eneman

et al. 2009

Electrochem. Solid-State Lett.

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“…The advantage of this technique with respect to the microscopy approach is twofold: (a) it does not require any preparation, avoiding the possible introduction of artifacts [12] and, (b) if their concentration is high enough, it is also sensitive to point defects invisible to TEM [13,14].…”

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confidence: 99%

High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

Bisognin

Vangelista

Bruno

2008

Materials Science and Engineering: B

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“…The samples may not have been subjected to a sufficient thermal budget to allow the formation of extended defects or if already formed, they may be very small and high in concentration which limits the ability to view individual defects. 42 With increasing annealing temperature, the contrast associated with the damaged lattice decreases which suggests that the damage has been reduced. In Fig.…”

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confidence: 99%

Activation and thermal stability of ultra-shallow B+-implants in Ge

Yates

Darby

Petersen

et al. 2012

Journal of Applied Physics

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The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 1013 to 5.0 × 1015 cm−2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H+ beam by utilizing the 11B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

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Defects in Ge and Si caused by 1MeV Si+ implantation

Cited by 10 publications

References 20 publications

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

Activation and thermal stability of ultra-shallow B+-implants in Ge

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