Present address: Arizona State University, School of Electrical, Computer and Energy Engineering, 551 E. Tyler Mall, Tempe, AZ 85287, USA.Reducing wafer thickness while increasing power conversion efficiency is the most effective way to reduce cost per Watt of a silicon photovoltaic module. Within the European project 20 percent efficiency on less than 100-mm-thick, industrially feasible crystalline silicon solar cells ("20plms"), we study the whole process chain for thin wafers, from wafering to module integration and life-cycle analysis. We investigate three different solar cell fabrication routes, categorized according to the temperature of the junction formation process and the wafer doping type: p-type silicon high temperature, n-type silicon high temperature and n-type silicon low temperature. For each route, an efficiency of 19.5% or greater is achieved on wafers less than 100 mm thick, with a maximum efficiency of 21.1% on an 80-mm-thick wafer. The n-type high temperature route is then transferred to a pilot production line, and a median solar cell efficiency of 20.0% is demonstrated on 100-mm-thick wafers.

For the first time we present a free energy loss analysis (FELA) of heterojunction silicon solar cells (HSSC) to study the influence of the intrinsic buffer layer thickness (tbuffer) on the solar cell efficiency (η). The main advantage of the FELA is that the impact of various loss mechanisms can be directly expressed in absolute percentage of η. Furthermore, it is possible to extract the magnitude of every loss for each region of the solar cell. All quantities required to perform the FELA are obtained by the simulation software AFORS‐HET. The FELA yields an optimum efficiency of 21.24% for tbuffer ≈ 5 nm. The efficiency drop for tbuffer £ 5 nm is ascribed to a lower maximum usable generated power ΦG(22.84% @ 2 nm, 23.98% @ 5 nm). Lower efficiencies for tbuffer ³ 5 nm are attributed to the increased transport loss of holes in the intrinsic buffer layer (0.05% @ 2 nm, 0.65% 8 nm). The η values yielded by the FELA are in agreement with the ones calculated by AFORS‐HET, demonstrating the applicability of the FELA to the HSSC concept. Therewith, we demonstrate that the FELA can be employed to obtain a deeper understanding of the HSSC concept. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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