2013
DOI: 10.1016/j.egypro.2013.07.304
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Record Efficiency of PhosTop Solar Cells from n-type Cz UMG Silicon Wafers

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Cited by 13 publications
(6 citation statements)
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“…Upgraded Metallurgical-Grade (UMG) silicon has raised interest as a low cost alternative material for high efficiency silicon solar cells. [1][2][3][4][5][6][7] UMG silicon feedstock is purified using a liquid phase purification process. As a result, it contains more impurities, especially shallow acceptors and donors (B, Al, and P), and the minority carrier lifetime is usually lower in the as-grown state.…”
mentioning
confidence: 99%
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“…Upgraded Metallurgical-Grade (UMG) silicon has raised interest as a low cost alternative material for high efficiency silicon solar cells. [1][2][3][4][5][6][7] UMG silicon feedstock is purified using a liquid phase purification process. As a result, it contains more impurities, especially shallow acceptors and donors (B, Al, and P), and the minority carrier lifetime is usually lower in the as-grown state.…”
mentioning
confidence: 99%
“…6 This was then followed by a 19% n-type UMG Cz homojunction cell one year later. 7 Recently, Rougieux et al 12 reported a 19.8% efficient Passivated Emitter Rear Totally diffused (PERT) cell using 100% UMG n-type Cz.…”
mentioning
confidence: 99%
“…Recently, Wang et al reported an industrial type of solar cells with selective front‐surface field and better emitter surface passivation by AlO x / SiN x layer; the obtained highest efficiency was 20.6% . Moreover, Schiele et al reported a record efficiency of 19% based on relative “dirty” upgraded metallurgical‐grade (compensated) silicon . In a word, the aluminum‐alloyed back‐junction n‐type silicon solar cells have a very good potential for commercial application.…”
Section: Introductionmentioning
confidence: 99%
“…Upgraded Metallurgical‐Grade (UMG) silicon has raised interest as an alternative material for silicon solar cells . UMG silicon is produced using a liquid phase purification of Metallurgical‐Grade (MG) silicon, but contains more impurities than electronic‐grade (EG, vapour phase purification) silicon, especially shallow acceptors (B, Al) and donors (P).…”
Section: Introductionmentioning
confidence: 99%