In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was-97.3 dBm and-90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.
In this paper, we describe the design and fabrication of a wideband frequency down converter module that has a local circuit with high gain, low spurious, high IP3 (3rd intercept point) characteristics, and reliability; this is accomplished by applying a chip-and-wire process using a bare type monolithic microwave integrated circuit (MMIC) device. To compensate for the mismatch among many sub-modules, an input module, filter bank module, output module, and local oscillator (LO) module suitable for sub-band frequency characteristics were designed and applied to the down converter. Th e frequency down converter module had three paths: 0.5−2 GHz (direct), 2−6 GHz (direct), and 6−18 GHz (converter). Amplitude-matched radio frequency (RF) semi-rigid cables of different lengths were used to connect to the internal sub-modules of the frequency down converter. The main RF line was a dielectric substrate, RT/duroid 5880, with a relative dielectric constant of 2.2 and a dielectric thickness of 0.127 mm. In the wideband frequency down converter module, the gain was 22.7 dB at low band (input frequency, 0.5−2 GHz) with a flatness of about 3.4 dB. Th e gain was 22.6 dB at mid band (input frequency, 2−6 GHz) having flatness about 2.0 dB. The gain was from 30 dB at edge frequency of high band (input frequency, 14−18 GHz) with a flatness of about 4.2 dB. The measured value of IP3 at LB was +23.52 dBm, +25.66 dBm and +23.44 dBm as the maximum value. The measured value of spurious (LO-2IF) at the converter path was 34.97 dBc as the maximum value.
This paper proposes the design and measurement of a 6-18 GHz front-end receiver module that has been combined into a one-channel output from a two-channel input for electronic warfare support measures (ESM) applications. This module includes a limiter, high-pass filter (HPF), power combiner, equalizer and amplifier. This paper focuses on the design aspects of reducing the noise figure (NF) and matching the phase and amplitude. The NF, linear equalizer, power divider, and HPF were considered in the design. A broadband receiver based on a combined configuration used to obtain low NF. We verify that our receiver module improves the noise figure by as much as 0.78 dB over measured data with a maximum of 5.54 dB over a 6-18 GHz bandwidth; the difference value of phase matching is within 7° between ports.
In this paper, we design and fabricate a broadband switching matrix box with low-noise figure, flat gain characteristics, and reliability by applying the chip-and-wire process using a bare-type MMIC device. To compensate for the mismatch among many components, the limiter, switch, amplifier, and power divider, which are suitable for sub-band frequency characteristics, are designed and applied to the matrix box. The matrix box has three submodules that are phase-matched for each frequency band and one built-in test (BIT) submodule to select the BIT path for calibration. Phase-matched RF semi-rigid cables of different lengths are used to connect to the external interface of the matrix box. The main RF line is a dielectric substrate, RT/Duroid 5880, with a relative dielectric constant of 2.2 and a dielectric thickness of 0.127 mm. The BIT path is a dielectric substrate, ceramic alumina (AI2O3), which has a relative dielectric constant of 9.8 and a dielectric thickness of 0.254 mm. In the wideband switching matrix box, the gain is from −1.71 dB to −2.69 dB at LB (input frequency, 0.5−2 GHz), with a flatness of 1.0 dB. Th e gain is from +14.8 dB to +12.4 dB at MB (input frequency, 1−6 GHz), with a flatness of 2.4 dB. The gain is from +12.6 dB to +9.4 dB at HB (input frequency, 6−18 GHz), with a flatness of 3.2 dB. The measured values of the noise figure are 2.69 dB at low band, 4.4 dB at medium band, and 5.95 dB at high band with a maximum value. The measured value of phase matching at high band is 7º with a maximum value.
In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a reliable and stable high-frequency downconverter for the millimeter-wave (Ka band) and detail the contents of the approach. We design and fabricate a stable downconverter with a low noise figure, flat gain characteristics, and multi-channel characteristics suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device into the RF path. To compensate for the mismatch among the many components used in the module, W/G transition, an image rejection mixer, a switch, and an amplifier suitable for millimeter-wave frequency characteristics are designed and applied to the downconverter. To reject the spurious signals generated from the complex local oscillation signals, the downconverter is designed to not affect the RF path. In the Ka-band downconverter, the gain is measured from 41.89 dB to 42.83 dB at 33-35 GHz with flatness of about 0.94 dB. The measured value of the noise figure at CH1 is 4.936 dB with a maximum value in the 0.75-1.25 GHz intermediate frequency. The third intermodulation measurement result is 61.83 dBc under a-50 dBm input power and above gain, and the switching to select a channel takes about 622 μs.
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