A planar waveguide is fabricated by 3 MeV O2+ ion-implanted in MgO-doped lithium niobate, and the refractive index profiles of waveguides are reconstructed based on etching and ellipsometry techniques. The SRIM2003 code is used to simulate the damage distribution induced by implantation. The etching rate versus the etching depth is extracted and the relation between the etching rate and the damage profile is discussed. The index profile of this kind of waveguide is determined by etching in combination with the following ellipsometric measurements. Both ordinary and extraordinary index profiles in waveguide are obtained. The influence of damage profile on index profiles in waveguide, as well as that on waveguide properties is analysed.
HV LDMOS on SOI has found wide applications such as lighting electronics and motor control due to its advantages over conventional LDMOS on bulk silicon. However, the design of optimized junctions with high breakdown voltages is commonly recognized to be difficult. This is partly because of the lack of analytical knowledge for the junctions design. In this study, various junctions were simulated by TCAD and analyzed from semiconductor physics point of view. It includes not only the junctions showing high breakdown voltages (>600V) but also the junctions showing relatively low breakdown voltages. The electrical field distribution, electrostatic potential distribution, depletion region and mobile carriers etc. were compared and analyzed to explain the reasons why a high breakdown voltage can be achieved for some junctions. Additionally, the breakdown voltage dependence on drift region doping profile was also studied.
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