We have been successful in obtaining temperature-stable crystallized thin film of (Zr,Sn)TiO4. Preferential (111)-oriented (Zr,Sn)TiO4 thin film was prepared by pulsed laser deposition. Effects of crystallization were elucidated based on a comparison of electric properties of crystallized and amorphous (Zr,Sn)TiO4 film. For crystallized film, the temperature coefficient of capacitance (TCC) was 20 ppm/°C at 3 MHz and the dielectric constant εr=38 in the microwave range of 1–10 GHz. These values are superior to those for amorphous film (TCC=220 ppm/°C, εr=27). The crystallization of this material was found quite effective for improving dielectrical properties. Atomic force microscope images showed the surface morphologies of crystallized and amorphous film of (Zr,Sn)TiO4 to differ.
Moisture-resistant ZnO transparent conductive films were formed with Ga heavy doping by off-axis-type rf magnetron sputtering. The resistivity of 12.4wt% Ga-doped ZnO is 1.3×10−3Ωcm and changes by less than 3% over a 2000h reliability test at a temperature of 85°C and a humidity of 85%. The crystal structural analysis of the heavily Ga-doped ZnO films indicates that the c axis grows along various directions, which is quite different from the conventional c-axis oriented growth. The effect of heavy doping is discussed based on the crystal structural transformation and carrier compensation by excess Ga segregated in the film.
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