Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition

Nakagawara, Osamu; Toyota, Y.; Kobayashi, Masato; Yoshino, Yukio; Katayama, Yuzo; Tabata, Hitoshi; Kawai, Tomoji

doi:10.1063/1.362795

Cited by 91 publications

(52 citation statements)

References 10 publications

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“…Indeed, preliminary studies of Zr-Sn-Ti-O thin films were aimed in exactly this region. [26,27] This demonstrates the power of the highthroughput approach -amorphous Zr .2 Sn .2 Ti .6 O 2 was discovered only because a broad search uncovered a completely unanticipated result.…”

Section: Using High-throughput Techniques To Search For New Inorganicmentioning

confidence: 99%

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Dover

Schneemeyer

2004

Macromol. Rapid Commun.

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Summary: We discuss the high‐throughput materials discovery/exploration paradigm in the context of inorganic materials. We emphasize the codeposited continuous composition spread approach, contrasting it with layered composition spreads and the discrete combinatorial approach to synthesis. The results of specific investigations on dielectrics are discussed in detail. The use of inorganic materials in thin film form entails some general advantages and disadvantages that will be discussed. We also contrast the considerations involved in the screening/discovery of new materials vis‐à‐vis reliable characterization of the composition dependence of properties.Ternary plot of the relative dielectric constant in the ZrSnTiO system.magnified imageTernary plot of the relative dielectric constant in the ZrSnTiO system.

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Section: Using High-throughput Techniques To Search For New Inorganicmentioning

confidence: 99%

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Dover

Schneemeyer

2004

Macromol. Rapid Commun.

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“…2 Films of ZTS have been produced by using sol-gel, 3 r.f. magnetron sputtering 4 and pulsed laser ablation 5,6 techniques. Nevertheless, the preparation of ZTS thin films by means of different techniques remains an open field for experimental explorations.…”

Section: Introductionmentioning

confidence: 99%

Study of Zr_1−xSn_xTiO₄ thin films prepared by a polymeric precursor route

Gusmano¹,

Bianco²,

Viticoli³

et al. 2002

Surface & Interface Analysis

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Zirconium-stannate titanate Zr 1−x Sn x TiO 4 (ZTS) thin films, undoped and doped with Sb, Ta and Nb, were prepared by a polymeric precursor technique. The ZTS films were deposited on the multilayered substrates (Pt/Ti/SiO 2 /Si) by means of multiple spin-coating. After this deposition, the samples were heated at different temperatures (300-700• C). The chemical composition of these films and bulk ZTS samples was investigated by using x-ray photoelectron spectroscopy and selected-area XPS depth profiling. A partial surface segregation of Sn IV and the presence of Sn 0 , Ti II and Ti III species in the films were revealed from XPS depth profiles. An optimized ZTS deposition process, where an oxidizing agent (H 2 O 2 ) is added to the gel, is proposed.

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“…Therefore, ionic polarization changes with film crystallinity. Thus, differences in dielectric constants of heattreatment temperature may be explained by the contribution of ionic polarization to the total polarizability [10].…”

Section: Resultsmentioning

confidence: 99%

Dielectric properties of ZrTiO4 thin films synthesized by sol-gel method

et al. 2004

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ZrTiO4 thin films were successfully prepared on Pt/Ti/SiO2/Si(100) substrates by a sol-gel process and gel films were heat-treated at various temperatures. The surface morphology, crystal structure, and dielectric properties of the thin films were investigated. It was possible to obtain ZrTiO4 phase at temperatures above 650 o C for 2 h, which is much lower than the bulk sintering temperature. The microstructure of well-crystallized ZrTiO4 thin films was a fine-grained microstructure less than 70 nm in grain size and the surface morphology was smooth with 22.4 rms roughness. The dielectric constant and loss of ZrTiO4 thin films were 38 and 0.006, respectively, for thin films with 450 nm thickness heat-treated at 900 o C for 2 h.

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Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition

Cited by 91 publications

References 10 publications

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Study of Zr_1−xSn_xTiO₄ thin films prepared by a polymeric precursor route

Dielectric properties of ZrTiO4 thin films synthesized by sol-gel method

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Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition

Cited by 91 publications

References 10 publications

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Study of Zr1−xSnxTiO4 thin films prepared by a polymeric precursor route

Dielectric properties of ZrTiO4 thin films synthesized by sol-gel method

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Study of Zr_1−xSn_xTiO₄ thin films prepared by a polymeric precursor route