We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) adhesive bonding for on-chip optical interconnection. The integration ofa butt-jointed built-in (BJB) GaInAsP passive waveguide was performed by organometallic vapor-phase epitaxy (OMVPE).By introducing a strongly index-coupled DFB structure with a 50-µm-long cavity, a threshold current of 230 µA was achieved for a stripe width of 0.8 µm under room-temperature continuous-wave (RT-CW) conditions. The maximum output power of 32 µW was obtained. The lasing wavelength and submode suppression ratio (SMSR) were 1534 nm and 28 dB, respectively, at a bias current of 1.2 mA.
We successfully demonstrated room-temperature continuous-wave (RT-CW) operation of a lateral-current-injection (LCI) GaInAsP/InP membrane Fabry–Perot laser by benzocyclobutene (BCB) adhesive bonding on a Si substrate for the first time. Our results include, for example, a threshold current of 2.5 mA and an external differential quantum efficiency of 22% per facet were obtained for a stripe width of 0.7 µm and a cavity length of 350 µm. From measurements of the differential quantum efficiency as a function of the cavity length, an internal quantum efficiency of 75% and a waveguide loss of 42 cm−1 were obtained.
In this paper, we report on the first ever demonstration of a continuous-wave operation of an injection-type membrane distributed-reflector (DR) laser at room temperature. A threshold current of 250 µA was obtained with a stripe width of 0.7 µm, a DFB region length of 30 µm, and a DBR region length of 90 µm. An external differential quantum efficiency of 11% with a light output ratio between the front and the rear of 6.7 was obtained at the front waveguide.
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