Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate

Inoue, Daisuke; Lee, Jieun; Doi, Kyohei; Hiratani, Takuo; Atsuji, Yuki; Amemiya, Tomohiro; Nishiyama, N.; Arai, Shigehisa

doi:10.7567/apex.7.072701

Cited by 31 publications

(23 citation statements)

References 22 publications

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“…RT-CW operation of a membrane FP laser bonded on Si substrate was demonstrated [38], with a threshold current of 2.5 mA (cavity length of 350 μm and the stripe width of 0.7 μm) and IQE of 75% by reduction of thermal resistance. Then RT-CW operation of membrane DFB lasers were demonstrated and the threshold current was reduced to 0.39 mA and 0.23 mA by adopting a narrow stripe (0.2 μm) geometry [39] and by a short cavity (50 μm) structure [40], respectively.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-µm-long active section and 50-µm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61-µm-long distributed feedback section and 50-µm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-µm-long and 61-µm-long devices.

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Section: Introductionmentioning

confidence: 99%

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…A threshold current density Jth was 1350 A/cm 2 (270 A/cm 2 /well), which was approximately 3 times higher than that of longer cavity (10 ) device. This poor threshold current as well as low d may be attributed to a leakage current between the DFB and the passive waveguide sections since d = 22%/facet was obtained for membrane Fabry-Perot cavity lasers [4].…”

Section: Measurementsmentioning

confidence: 98%

“…Then, a GaInAsP passive waveguide core layer ( g = 1220 nm) was grown by OMVPE selective-area-growth. Subsequently, two-step regrowth of n-and p-InP layers for the lateral PIN junction structure, a BCB wafer bonding on a Si substrate, and an electrode formation were conducted [4]. Finally, a surface grating was formed by an electron beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Integration of membrane-based DFB laser and PIN photodiode on Si substrate toward on-chip interconnection

Inoue

Hiratani

Tomiyasu

et al. 2015

2015 IEEE Optical Interconnects Conference (OI)

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“…In our early works, optically pumped operation has revealed low-threshold and strong index-coupled characteristics [35]- [37]. By adopting a lateral-current-injection (LCI) structure [38]- [41], LCI-membrane lasers were operated with both pulsed [42] and continuous-waves (CWs) [43], [44]. Many integration schemes are available, such as butt-jointed built-in (BJB) structures [45], quantum-well intermixing [46], offset quantum wells [47], and so on.…”

Section: Introductionmentioning

confidence: 99%

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Inoue¹,

Hiratani²,

Fukuda³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 2 31 -1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 × 10 -7 is successfully achieved.

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Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate

Cited by 31 publications

References 22 publications

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Integration of membrane-based DFB laser and PIN photodiode on Si substrate toward on-chip interconnection

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

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