Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate

Abstract

We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) adhesive bonding for on-chip optical interconnection. The integration ofa butt-jointed built-in (BJB) GaInAsP passive waveguide was performed by organometallic vapor-phase epitaxy (OMVPE).By introducing a strongly index-coupled DFB structure with a 50-µm-long cavity, a threshold current of 230 µA was achieved for a stripe width of 0.8 µm under room-temperature continuous-wave (RT-CW) conditions. The maximum output power of 32 µW was obtained. The lasing wavelength and submode suppression ratio (SMSR) were 1534 nm and 28 dB, respectively, at a bias current of 1.2 mA.

Advanced Integration Techniques on Broadband Millimeter-Wave Beam Steering for 5G Wireless Networks and Beyond

“…The hybrid photonic platforms where one or more photonic layers are integrated with EICs appear to be a promising solution. Several hybrid schemes exist and can be categorized in two types: III-V/Si hybrid integration [99], [100] and III-V membrane integration [102], [104]. The schematic diagrams of the cross-section geometry for those schemes are depicted in Fig.…”

“…In a lateral junction design in the III-V membrane (see Fig. 23(b)), the laser can reach threshold current as low as 0.23 mA [104]. For the modulation, miniaturization leads to significant relaxing the RC limit in most devices, and also reducing the required energy at high-speed operation.…”

Ultra-Sharp and Highly Tolerant Waveguide Bends for InP Photonic Membrane Circuits

“…The optical confinement in membrane waveguides can be greatly enhanced by using an optical buffer layer between the membrane and the substrate. The optical buffer layer can be SiO 2 for silicon-based membrane platforms [3] or polymer/SiO 2 for indium phosphide (InP) based membrane platforms [1], [2]. As a result, the waveguide dimensions are reduced down to the sub-micron range.…”

High modulation efficiency of sub-milliampere threshold GaInAsP/InP membrane DFB laser

“…We demonstrated sub-mA threshold operation of lateralcurrent-injection (LCI) membrane DFB laser prepared on a Si substrate by using benzocyclobutene (BCB) adhesive bonding [3], and its integration with a p-i-n-photodiode (PIN-PD) by butt-jointed built-in (BJB) structure [4]. However, dynamic characteristics of LCI membrane DFB laser under a high-speed direct modulation were not reported.…”

“…The detail fabrication procedure was described in ref. [3]. A 270-nm-thick semiconductor layer was bonded on a p-Si substrate by using 2-µm-thick BCB adhesive layer and 1-µm-thick SiO2 cladding layer.…”