Most conventional chemical vapor deposition (CVD) systems do not have the spatial actuation and sensing capabilities necessary to control deposition uniformity, or to intentionally induce nonuniform deposition patterns for single-wafer combinatorial CVD experiments. In an effort to address this limitation, a novel CVD reactor system has been developed that can explicitly control the spatial profile of gas-phase chemical composition across the wafer surface. This paper discusses the simulation-based design of a prototype reactor system and the results of preliminary experiments performed to evaluate the performance of the prototype in depositing tungsten films. Initial experimental results demonstrate that it is possible to produce spatially patterned wafers using a CVD process by controlling gas phase reactant composition.Topical heading: Process Systems Engineering
Articles you may be interested inIn situ chemical sensing in Al Ga N ∕ Ga N metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control J. Vac. Sci. Technol. B 23, 2007 (2005 10.1116/1.2037707 In situ chemical sensing in Al Ga N ∕ Ga N high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control J. Vac. Sci. Technol. B 23, 1386 (2005 10.1116/1.1993616 Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ mass spectrometry Mass spectrometry has proven valuable in understanding and controlling chemical processes used in semiconductor fabrication. Given the complexity of spatial distributions of fluid flow, thermal, and chemical parameters in such processes, multipoint chemical sampling would be beneficial. The authors have designed and implemented a multiplexed mass spectrometric gas sampling system for real-time, in situ measurement of gas species concentrations at multiple locations in a spatially programmable chemical vapor deposition ͑SP-CVD͒ reactor prototype, where such chemical sensing is essential to achieve the benefits of a new paradigm for reactor design. The spatially programmable reactor, in which across-wafer distributions of reactant are programmable, enables ͑1͒ uniformity at any desired process design point, or ͑2͒ intentional nonuniformity to accelerate process optimization through combinatorial methods. The application of multiplexed mass spectrometric sensing is well suited to our SP-CVD design, which is unique in effectively segmenting the showerhead gas flows by using exhaust gas pumping through the showerhead for each segment. In turn, mass spectrometric sampling signals for each segment are multiplexed to obtain real-time signatures of reactor spatial behavior. Here the authors report results using inert gases to study the spatial distributions of species, validate SP-CVD reactor models, and lead to an understanding of fundamental phenomena associated with the reactor design. This forms the basis for using real-time mass spectrometry to drive process sensing, metrology, and control in such reactor systems.
Ti/Ni/Au/diamond metal-insulator-semiconductor field effect transistors with TiO2 gate dielectric have been successfully fabricated. In this work, multi-layer metallization on the semiconducting diamond surface was investigated. Post-metallization annealing was performed and EDS analysis was conducted both before annealing and after annealing. Elevated temperature annealing accelerates the diffusion between multi-layer metal and lowers the ohmic contact resistance of the interface. Current-voltage characteristics of the transistor are reported.
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