Development of a spatially controllable chemical vapor deposition reactor with combinatorial processing capabilities

Choo, Jae-Ouk; Adomaitis, Raymond A.; Henn-Lecordier, Laurent; Cai, Yuhong; Rubloff, Gary W.

doi:10.1063/1.1906183

Cited by 22 publications

(17 citation statements)

References 32 publications

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“…The development of high-throughput chemical vapor deposition (CVD) methodologies for high-j gate dielectrics [56][57][58] is an important effort, since CVD and a related technology, atomic layer deposition (ALD) 59 may be the manufacturing methods of choice for these critical films. Thus, it is important to explore the feasibility of performing combinatorial experimentation in such a platform.…”

Section: Advanced Gate Stack Materialsmentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

224

189

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High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same "library" sample, they can be highly uniform with respect to fixed processing parameters. This article critically reviews the literature pertaining to applications of combinatorial materials science for electronic, magnetic, optical, and energy-related materials. It is expected that high throughput methodologies will facilitate commercialization of novel materials for these critically important applications. Despite the overwhelming evidence presented in this paper that high throughput studies can effectively inform commercial practice, in our perception, it remains an underutilized research and development tool. Part of this perception may be due to the inaccessibility of proprietary industrial research and development practices, but clearly the initial cost and availability of high throughput laboratory equipment plays a role. Combinatorial materials science has traditionally been focused on materials discovery, screening, and optimization to combat the extremely high cost and long development times for new materials and their introduction into commerce. Going forward, combinatorial materials science will also be driven by other needs such as materials substitution and experimental verification of materials properties predicted by modeling and simulation, which have recently received much attention with the advent of the Materials Genome Initiative. Thus, the challenge for combinatorial methodology will be the effective coupling of synthesis, characterization and theory, and the ability to rapidly manage large amounts of data in a variety of formats. V C 2013 AIP Publishing LLC. [http://dx

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Section: Advanced Gate Stack Materialsmentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

224

189

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“…A representative sample of tungsten film thickness as determined using four-point probe measurements [6] is shown in Fig. 1.…”

Section: Virtual Wafersmentioning

confidence: 99%

“…In the second example we consider data produced by the Programmable CVD reactor system [5,6,9,10], a reactor designed to test spatially controlled CVD concepts. The main feature of this system is its segmented showerhead design that allows independent control of feed gas composition to each segment.…”

Section: Model Comparison For the Spatially Programable Cvd Reactormentioning

confidence: 99%

“…In Taylor and Semancik [12], microhotplate devices were used to control the temperature in an array of micro-scale substrate samples; it was found that temperature gradients in the microhotplate supports resulted in a microstructurally graded film on the support legs. Finally, the Programmable Reactor system [5,6,9,10] features a segmented shower head design where each segment is fed individually with reactant gases and exhaust gas is pumped back up through each segment. This concept was tested in a three-zone prototype tungsten deposition system to evaluate the system's ability to manipulate gas phase composition across the wafer surface [5,6] and to demonstrate its true programmable nature using a modelbased approach to controlling spatial deposition patterns across the wafer surface [9,10].…”

Section: Combinatorial Cvdmentioning

confidence: 99%

See 1 more Smart Citation

Full-wafer mapping and response surface modeling techniques for thin film deposition processes

Leon

Adomaitis

2009

Journal of Crystal Growth

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Isr develops, applies and teaches advanced methodologies of design and analysis to solve complex, hierarchical, heterogeneous and dynamic problems of engineering technology and systems for industry and government.Isr is a permanent institute of the university of maryland, within the a. James clark school of engineering. It is a graduated national science foundation engineering research center. AbstractComputational techniques for representing and analyzing full wafer metrology data are developed for chemical vapor deposition and other thin-film processing applications. Spatially resolved measurement data are used to produce "virtual wafers" that are subsequently used to create response surface models for predicting the full-wafer thickness, composition, or any other property profile as a function of processing parameters. Statistical analysis tools are developed to assess model prediction accuracy and to compare the relative accuracies of different models created from the same wafer data set. Examples illustrating the use of these techniques for film property uniformity optimization and for creating intentional film-property spatial gradients for combinatorial CVD applications are presented.

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“…Combinatorial methods have been widely used in pharmaceutical industries for drug discovery [10]. They have been adapted for thin film depositions and attracted a lot of interest in recent years [11][12][13][14][15]. In our combinatorial approach, the lithium niobate deposition is carried out in a high-vacuum chamber in which a novel precursor supply system allows individual spatial control of precursors impinging rates on the substrate.…”

Section: Introductionmentioning

confidence: 99%

Combinatorial Chemical Vapor Deposition of Lithium Niobate Thin Films

et al. 2009

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Combinatorial lithium niobate deposition on 150 mm naturally oxidized silicon (100) wafers in a high-vacuum chemical vapor deposition reactor using Li(OBu t ) and Nb(OEt)4(dmae) is presented. The novel precursor supply system allows individual spatial control of precursors impinging rates on the substrate. This results in variations of the film properties in a single experiment at a certain substrate temperature due to the influence of different precursors flow rates and ratios. It efficiently leads to deposition conditions to achieve highly <001> oriented polycrystalline lithium niobate films.

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Development of a spatially controllable chemical vapor deposition reactor with combinatorial processing capabilities

Cited by 22 publications

References 32 publications

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Full-wafer mapping and response surface modeling techniques for thin film deposition processes

Combinatorial Chemical Vapor Deposition of Lithium Niobate Thin Films

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