The image quality of the transparent AMOLED, which is the most potential candidate of next generation technology, is highly dependent on the surroundings. In this work, the concept of highimage-quality transparent display based on AMOLED with a desirable liquid crystal shutter back-panel is demonstrated.
Top-gate typed amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors (TFTs) and a technologically advanced transparent storage capacitance structure have been successfully employed in pixel circuits. The design procedure was systematically studied. Eventually, a 15-inch gate-driver-on-array (GOA) drived active matrix organic light-emitting diode (AMOLED) display was demonstrated with a high resolution of 147 ppi.
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