We reported an experimental fabrication of double-gated (DG) thin-film transistor (TFT) with IGZO recess-channel using a designer photoresist-based thin-film profile engineering approach. In this approach, an organic shadow mask of photoresist (PR) was formed over a p+-Si wafer that was encapsulated by an oxide layer. The lithographically-patterned PR layer is an effective mask for shadowing reactive species during the subsequent deposition steps of IGZO and Aluminum, enabling the formation of IGZO recess-channel and discrete Al source/drain pads at room-temperature. The top-gate or DG configurations with the Si substrate serving as the bottom-gate were investigated. The fabricated DG TFTs show significant improvements in both ION and IOFF as compared with single-gated TFTs. The proposed process scheme is readily applicable to the back-end-of-line of a chip. This work demonstrates the feasibility of IGZO recess-channel TFTs in various gated configurations, enabling a building block for emerging functional devices for More-than-Moore applications.
Cu erosion of via hole within GOA unit of super‐large and ultra‐HD TFT‐LCD of 120Hz frame rate is an important issue and may cause some line failures. Reliability tests of panel about temperature and humidity are used to accelerate occurrences of the relative failures (Y‐Line). Effects of some critical factors including ITO thickness, tray life and sealant coverage are analyzed for optimal combination of mass production parameters. Furthermore, mechanisms of the Y‐Line failure are dissected by some modern analytical equipment. Deep via hole broken is found to be primary cause of Y‐Line failure of 75inch 4K 120Hz panel in Green127 pattern. The broken is caused by erosion of gate Cu in the via hole. There is initial Cu erosion at chamfer consisting of GI‐Cu‐ITO, caused by photoresist stripping after via hole etch, leading to open the ITO used to connect gate Cu (below GI) and data line (above GI). The ITO open provides possibility for H2O to passing through, and greatly weakens its shielding ability. A channel for H2O diffusion resulting in Cu erosion after “8585” and “THO” tests can be speculated to be interfaces consisting of Sealant‐PVX and Sealant‐ITO.
Abstract. In order to improve the reliability of power supply, power grid companies carry out the project of 10kV power distribution of live working actively, which gradually realizes the overhaul of distribution power without outage. The workers doing the operation to stop outage need to wear charged insulating clothing, which will be inevitably squeezed, rubbed, scratched and other damages from hard objects after being used. This paper introduces the detection methods of charged insulating clothing, namely to adopt the testing fork that is connected with the insulating megger dedicatedly, which move from up to down, left to right on the insulating clothing. When the insulating megger points to zero, it means that the insulation is damaged. Due to the testing method detects the mistake slowly, and the accuracy is poor, we develop "the human body model detection device". It mainly focuses on the device that is composed of high voltage unit, model hangers, conductive material, iron electrode and detector, and it elaborates the effectiveness of the device in the actual work at the same time.
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