A novel, yet simple solution fabrication technique to address the trade-off between photocurrent and fill factor in thick bulk heterojunction organic solar cells is described. The inverted off-center spinning technique promotes a vertical gradient of the donor-acceptor phase-separated morphology, enabling devices with near 100% internal quantum efficiency and a high power conversion efficiency of 10.95%.
Pentacene organic field-effect transistors (OFETs) based on single-or double-layer biocompatible dielectrics of poly(methyl methacrylate) (PMMA) and/or silk fibroin (SF) are fabricated. Compared with those devices based on single PMMA or SF dielectric or SF/PMMA bilayer dielectric, the OFETs with biocompatible PMMA/SF bilayer dielectric exhibit optimal performance with a high field-effect mobility of 0.21 cm 2 /Vs and a current on/off ratio of 1.5×10 4 . By investigating the surface morphology of the pentacene active layer through atom force microscopy and analyzing the electrical properties, the performance enhancement is mainly attributed to the crystallization improvement of the pentacene and the smaller interface trap density at the dielectric/organic interface. Meanwhile, a low contact resistance also indicates that a good electrode/organic contact is formed, thereby assisting the performance improvement of the OFET.
A top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1 ′ -bis(di-4tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO 3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO 3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO 3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
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