A perylene-based reactive mesogen (DAPDI) forming a lyotropic chromonic liquid crystal (LCLC) phase was newly designed and synthesized for the fabrication of macroscopically oriented and patterned thin film polarizer (TFP) on the flexible polymer substrates. The anisotropic optical property and molecular self-assembly of DAPDI were investigated by the combination of microscopic, scattering and spectroscopic techniques. The main driving forces of molecular self-assembly were the face-to-face π-π intermolecular interaction among aromatic cores and the nanophase separation between hydrophilic ionic groups and hydrophobic aromatic cores. Degree of polarization for the macroscopically oriented and photopolymerized DAPDI TFP was estimated to be 99.81% at the λmax = 491 nm. After mechanically shearing the DAPDI LCLC aqueous solution on the flexible polymer substrates, we successfully fabricated the patterned DAPDI TFP by etching the unpolymerized regions selectively blocked by a photomask during the photopolymerization process. Chemical and mechanical stabilities were confirmed by the solvent and pencil hardness tests, and its surface morphology was further investigated by optical microscopy, atomic force microscopy, and three-dimensional surface nanoprofiler. The flexible and patterned DAPDI TFP with robust chemical and mechanical stabilities can be a stepping stone for the advanced flexible optoelectronic devices.

A copper(II)–hydroperoxo complex, [Cu(Me6-tren)(OOH)]+ (2), and a copper(II)–cumylperoxo complex, [Cu(Me6-tren)(OOC(CH3)2Ph)]+ (3), were synthesized by reacting [Cu(Me6-tren)(CH3CN)]2+ (1) with H2O2 and cumyl-OOH, respectively, in the presence of triethylamine. These intermediates, 2 and 3, were successfully characterized by various physicochemical methods such as UV-vis, ESI-MS, resonance Raman and EPR spectroscopies, leading us to propose structures of the Cu(II)–OOR species with a trigonal-bipyramidal geometry. Density functional theory (DFT) calculations provided geometric and electronic configurations of 2 and 3, showing trigonal bipyramidal copper(II)–OOR geometries. These copper(II)–hydroperoxo and –cumylperoxo complexes were inactive in electrophilic and nucleophilic oxidation reactions.

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Silicon oxide thin film grown at low temperatures (<300–500 °C) is essential for a range of applications in semiconductor devices. In this study, silicon oxide films were deposited at a substrate temperature of ∼300 °C by an atomic layer deposition (ALD) process using Bis(ethyl-methyl-amino)silane (BEMAS). BEMAS precursors adsorbed on the growing surface reacted with ozone but not with H2O. This suggests that the Si–H bonds in the BEMAS precursors adsorbed on the surface are robust and could be cleaved only by ozone. The reaction using BEMAS and ozone exhibited ALD saturation behavior. The dielectric constant of the ALD-SiO2 was measured to be ∼9, which is 2.3 times higher than that (∼3.9) of normal amorphous SiO2. This was attributed to the existence of the ∼10% OH species in the film.

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The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

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