Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

Park, Se Yeob; Song, Jang Ho; Lee, Chang Kyu; Son, Byeong Geun; Lee, Chul-Kyu; Kim, Hyo Jin; Choi, Rino; Choi, Yu Jin; Kim, Un Ki; Hwang, Cheol Seong; Kim, Hyeong Joon; Jeong, Jae Kyeong

doi:10.1109/led.2013.2259574

Cited by 54 publications

(22 citation statements)

References 11 publications

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“…It can be postulated that an abundance of oxygen vacancy sites was intrinsically generated during film formation, and replaced by hydrogen species in form of H o − . The pristine a ‐IZO films with In‐rich composition consisted of various amounts of oxygen vacancies, most of which were occupied as deep trap states in the electronic structure of the a ‐IZO films . Facile generation of the oxygen vacancies in In‐rich oxide films has been typically reported in studies related to electrical and optical instability generated via negative bias illumination stress test, both in a ‐IZO and a ‐IGZO‐based TFTs .…”

Section: Resultsmentioning

confidence: 88%

“…The pristine a ‐IZO films with In‐rich composition consisted of various amounts of oxygen vacancies, most of which were occupied as deep trap states in the electronic structure of the a ‐IZO films . Facile generation of the oxygen vacancies in In‐rich oxide films has been typically reported in studies related to electrical and optical instability generated via negative bias illumination stress test, both in a ‐IZO and a ‐IGZO‐based TFTs . Especially, more than 99% of the oxygen vacancies in the a ‐IZO films generated deep‐level defects in the mid‐gap states, rather than shallow localized states beneath the conduction band minimum .…”

Section: Resultsmentioning

confidence: 93%

See 1 more Smart Citation

Optimized Activation of Solution‐Processed Amorphous Oxide Semiconductors for Flexible Transparent Conductive Electrodes

Choi

Park

Baeg

et al. 2017

Adv Elect Materials

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Here, the preparation of transparent amorphous oxide semiconductor (AOS) films with unprecedented conductivity via an optimized activation process under hydrogen atmosphere for applications in solution‐processed large‐area optoelectronics is reported. Owing to their high cost and mechanical vulnerability, conventional vacuum‐processed indium–tin oxide (ITO) electrodes are inappropriate for use in next‐generation flexible and wearable electronic devices and systems. As an alternative to the ITO electrodes, solution‐processed AOS films, such as a‐IZO and a‐ZITO, with an optimized composition and postreduction treatment under hydrogen show the highest electrical conductivity of ≈300 S cm−1 and a high optical transmittance of over 90% at 550 nm. The microstructures and electrical properties of these AOS films are also studied in order to determine the optimized chemical composition and postreduction conditions. It is found that a controlled hydrogen reduction treatment of AOS films is critical for achieving high electrical conductivity by suppressing the surface morphology degradation and grain boundary disconnection. Furthermore, the a‐IZO transparent conductive electrodes are successfully implemented for high efficiency organic photovoltaic cells based on the PTB7/PC71BM active layers. This technique promises the low‐cost fabrication of high mobility and/or conductive AOSs for their applications in large‐area transparent and flexible optoelectronics.

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Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 93%

Optimized Activation of Solution‐Processed Amorphous Oxide Semiconductors for Flexible Transparent Conductive Electrodes

Choi

Park

Baeg

et al. 2017

Adv Elect Materials

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“…With progress in the information industry, thin‐film transistors (TFTs) and material technologies, which are core technologies of displays, have rapidly developed . Recent developments in the field of displays have satisfied the technical requirements of high resolution, high dynamic range, wide color gamut, and high frame rate owing to the performance improvements arising from the use of TFTs and materials such as plastic boards and indium tin oxide (ITO) .…”

Section: Introductionmentioning

confidence: 99%

“…With progress in the information industry, thin-film transistors (TFTs) and material technologies, which are core technologies of displays, have rapidly developed. [1][2][3][4] Recent developments in the field of displays have satisfied the technical requirements of high resolution, high dynamic range, wide color gamut, and high frame rate owing to the performance improvements arising from the use of TFTs and materials such as plastic boards and indium tin oxide (ITO). 5,6 In terms of visual design, curved displays, which are the precursors of flexible displays and have functionalities suitable for curved surfaces, have already been commercialized and are evolving into complete flexible displays.…”

Section: Introductionmentioning

confidence: 99%

Effects of curved computer displays on visual performance, visual fatigue, and emotional image quality

Lim

Yan

2019

J Soc Info Display

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This study investigated the effects of the curvature of curved computer displays on the visual performance, fatigue, and emotional image quality experienced by users during the performance of visual tasks. The characteristics of curved displays were compared and analyzed for different curvatures to investigate whether the curved displays showed improvements in terms of convenience of use when compared with flat displays. The visual performance results for the evaluated displays can be classified into three groups according to their response times, as (2000R = 2500R) > (3000R) > (3800R = 4500R = Flat). The visual fatigue results for average pupil size during a search task was 3.468 mm for flat and 3.355 mm for 2000R. This means that a 2000R curved display was found to be easier to use and thus generated less visual fatigue than a flat display when performing the same visual search task. Further, the results indicated that visual performance improved and visual fatigue decreased significantly as curvature increased. In this study, a curvature limit of 1700R was derived, when considering the image distortion of a 34‐in 21:9 curved display, and there was found to be no difference in the emotional image quality at curvatures greater than 2000R.

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“…The sensor can be integrated into display panels of hand-held consumer products for realizing photo-sensing functions such as ambient light sensors, image scanners, touch panel, etc 6–11 . Besides, amorphous metal oxide (AMO), especially the amorphous InZnO (a-IZO), has attracted much attention as the active layer material recently 12 . Unlike the conventional amorphous silicon (a-Si) TFT with poor carrier transport properties or the polycrystalline silicon (poly-Si) TFTs with poor uniformity over a large area, a-IZO shows a high electron mobility (~10 cm 2 /V.s), good uniformity, low manufacturing cost and low process temperature 13,14 .…”

Section: Introductionmentioning

confidence: 99%

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

Liu

Ruan

Yeh

et al. 2018

Sci Rep

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A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (~105) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.

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Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

Cited by 54 publications

References 11 publications

Optimized Activation of Solution‐Processed Amorphous Oxide Semiconductors for Flexible Transparent Conductive Electrodes

Optimized Activation of Solution‐Processed Amorphous Oxide Semiconductors for Flexible Transparent Conductive Electrodes

Effects of curved computer displays on visual performance, visual fatigue, and emotional image quality

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

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