This paper presents a low power, high sensitivity Gaussian frequency shift keying (GFSK) demodulator with a flexible frequency offset canceling method for wireless networks for industrial automation process automation (WIA-PA) transceiver fabricated in 0.18 μm CMOS technology. The receiver uses a low-IF (1.5 MHz) architecture, and the transmitter uses a sigma delta PLL based modulation with Gaussian low-pass filter for low power consumption. The active area of the demodulator is 0.14 mm2. Measurement results show that the proposed demodulator operates without harmonic distortion, deals with ± 180 kHz frequency offset, needs SNR only 18.5 dB at 0.1% bit-error rate (BER), and consumes no more than 0.26 mA from a 1.8 V power supply.
A new broadband slot antenna is developed, which is fed on the coplanar waveguide (CPW), which is fed that, when the relative permittivity is lower (ε r =2.2) and the substrate is thinner (h=0.8mm). The relevant simulation and calculation are performed by using CST Microwave Studio, The return loss curves and the radiation patterns of this new antenna are given. The results of simulation show that the center frequency is 3.52GHz, the impedance bandwidth is approximately 52% (S11<-10dB) and the frequency range is 3.07GHz~4.11GHz. Meanwhile, we can get the practical conclusion by simulated comparison between the antenna's physical parameters, which influence the antenna's function.Second International Symposium on Intelligent Information Technology Application 978-0-7695-3497-8/08 $25.00
A novel method for SRAM cell standby leakage measurement is presented, which enables accurate testing and decoupling of sub-threshold leakage (I_sub), gate leakage (I_gate) and junction leakage (I_junc) in each SRAM cell transistor. Moreover, the array based technique can not only precisely measure small current but also compensate the impact from random variations. The front-end SRAM array layout is kept original to preserve actual physical environment. The method is verified in SMIC 65nm technology. The data of I_sub, I_gate and I_junc of pull-down (PD), pull-up (PU) and pass-gate (PG) transistor are collected for process optimization to reduce standby power.
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