In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.
ARTICLE
This journal isIn this paper, a HfO 2 /Er 2 O 3 /HfO 2 (HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications. Atomic force microscopy and X-ray photoelectron spectroscopy were used to study the morphological and chemical features of Er 2 O 3 and HEH films. In comparison to the Er 2 O 3 dielectric, the α-IGZO TFT device incorporating a HEH stacked dielectric exhibited a lower threshold voltage of 0.7 V, a higher I on /I off current ratio of 2.86×10 7 , a larger field-effect mobility of 15.8 cm 2 /V-s, and a smaller subthreshold swing of 101 mV/decade, suggesting a smooth surface at the dielectricchannel interface. Furthermore, the threshold voltage stability of α-IGZO TFT under positive gate voltage stress can be improved by using a HEH stacked structure. structure is a promising gate dielectric material to fabricate α-IGZO TFTs for future display applications.
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