Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al 2 O 3 ) and on Si covered with a Si 3 N 4 buffer layer. The Si 3 N 4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si 3 N 4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.
Spectra and diffraction patterns of multilayer systems based on thin film phosphors Zn2SiO4:Mn, Zn2SiO4:Ti, ZnGa2O4:Cr, ZnGa2O4:Mn, Y2SiO5:Ce, and Y2O3:Eu are presented. Multilayer RGB phosphor triads for obtaining white color were investigate, and developed. Luminescence dependence on electron beam energy, current density, as well as long‐term stability of thin film oxide phosphors were investigated. The novel time behavior characteristic for degradation processes in thin films was found.
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