Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering

The Influence of Ar-N2 Plasma Conditions on GaN Deposition by rf Sputtering

“…The results of XRD studies show the Bragg peak position characterised hexagonal structure of the GaN layer. The values mentioned above are in conformity with relevant literature [2,4,5]. Properties of layers made beyond the optimal conditions of the process differ from the characteristic parameters of GaN films.…”

Synthesis of GaN by Reactive Sputtering at Low Temperature

“…S YNTHESIS OF GaN is usually carried out at high pressure and temperature in expensive reactors. We report on the technology of GaN synthesis which is founded on the reactive sputtering from Ga target in a nitrogen atmosphere [1,2].…”